ZTX451

ZTX450 ZTX451 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.3 Switching time VCE(sat) - (Volts) IB1=IB2=IC/10 VCE=-10V td,tr,tf ns 0.4 IC/IB=10 0.2 ZTX451 0.1 800 120 700 100 60 0.001 0.01 0.1 300 20 200 0 100 IC - Collector Current (Amps) 0.1 ABSOLUTE MAXIMUM RATINGS. 1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10 0.9 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 60 40 20 0.8 0.01 0.1 1 0.6 VBE(sat) v IC Single Pulse Test at Tamb=25°C 10 IC - Collector Current (Amps) 0.6 0.001 0.01 0.1 1 VBE - (Volts) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 300µs 100µs ZTX450 10 ZTX451 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-176 1 0.1 0.01 0.001 hFE v IC 0.8 ZTX451 UNIT 60 80 V Collector-Emitter Voltage VCEO 45 60 Emitter-Base Voltage VEBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX450 V UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 60 80 V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 45 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 0.1 µA µA VCB=45V VCB=60V Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.35 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 1.1 V IC=150mA, IB=15mA* Static Forward Current Transfer Ratio hFE 100 15 Transition Frequency fT 150 Output Capacitance Cobo MIN. IC - Collector Current (Amps) 1.0 ZTX450 VCBO 0.4 IC - Collector Current (Amps) 1.2 SYMBOL Collector-Base Voltage 0.5 10 1.4 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.7 0.3 0.001 E-Line TO92 Compatible 400 tf tr 0.01 80 E 500 td 40 1 C B 600 ts 80 ZTX450 0 ts nS 140 ZTX450 ZTX451 100 ZTX451 MAX. MIN. 300 50 10 MAX. 150 150 15 3-175 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ZTX450 ZTX451 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.3 Switching time VCE(sat) - (Volts) IB1=IB2=IC/10 VCE=-10V td,tr,tf ns 0.4 IC/IB=10 0.2 ZTX451 0.1 800 120 700 100 60 0.001 0.01 0.1 300 20 200 0 100 IC - Collector Current (Amps) 0.1 ABSOLUTE MAXIMUM RATINGS. 1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10 0.9 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 60 40 20 0.8 0.01 0.1 1 0.6 VBE(sat) v IC Single Pulse Test at Tamb=25°C 10 IC - Collector Current (Amps) 0.6 0.001 0.01 0.1 1 VBE - (Volts) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 300µs 100µs ZTX450 10 ZTX451 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-176 1 0.1 0.01 0.001 hFE v IC 0.8 ZTX451 UNIT 60 80 V Collector-Emitter Voltage VCEO 45 60 Emitter-Base Voltage VEBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX450 V UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 60 80 V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 45 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 0.1 µA µA VCB=45V VCB=60V Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.35 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 1.1 V IC=150mA, IB=15mA* Static Forward Current Transfer Ratio hFE 100 15 Transition Frequency fT 150 Output Capacitance Cobo MIN. IC - Collector Current (Amps) 1.0 ZTX450 VCBO 0.4 IC - Collector Current (Amps) 1.2 SYMBOL Collector-Base Voltage 0.5 10 1.4 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.7 0.3 0.001 E-Line TO92 Compatible 400 tf tr 0.01 80 E 500 td 40 1 C B 600 ts 80 ZTX450 0 ts nS 140 ZTX450 ZTX451 100 ZTX451 MAX. MIN. 300 50 10 MAX. 150 150 15 3-175 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz