ZTX455STOB

ZTX454 ZTX455 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ns 900 0.4 tr ns 500 800 400 700 300 600 ts µS Switching time VCE(sat) - (Volts) ts 0.3 IC/IB=10 0.2 0.1 7 tf 6 IB1=IB2=IC/10 VCE=10V 5 tr 500 400 1 0.01 0.1 1 300 0.01 IC - Collector Current (Amps) 50 0 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10 80 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 VCE=10V 60 40 20 0.001 0.8 0.1 1 0.001 hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1 VBE - (Volts) 0.8 0.6 0.4 0.1 0.01 IC - Collector Current (Amps) VCE=10V 1 Single Pulse Test at Tamb=25°C 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX454 0.0001 0.001 0.01 0.1 1 ZTX455 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-180 SYMBOL ZTX454 ZTX455 UNIT Collector-Base Voltage VCBO 140 160 V Collector-Emitter Voltage VCEO 120 140 Emitter-Base Voltage VEBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX454 V UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 140 160 V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 120 140 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA µA VCB=140V VCB=120V Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.7 1.0 0.7 V IC=150mA, IB=15mA IC=200mA, IB=20mA Static Forward Current Transfer Ratio hFE 100 30 10† Transition Frequency fT 100 Output Capacitance Cobo MIN. IC - Collector Current (Amps) 1.0 PARAMETER 0.4 10 1.2 ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 0.2 0.01 E E-Line TO92 Compatible 100 td 0 0.001 td nS 2 100 0 C B 4 3 200 ZTX454 ZTX455 1000 ZTX455 MAX. MIN. 0.1 300 100 MAX. 300 IC=150mA, VCE=10V* IC=200mA, VCE=1V* IC=1A, VCE=10V* 10† 100 15 15 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% † Typical 3-179 ZTX454 ZTX455 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ns 900 0.4 tr ns 500 800 400 700 300 600 ts µS Switching time VCE(sat) - (Volts) ts 0.3 IC/IB=10 0.2 0.1 7 tf 6 IB1=IB2=IC/10 VCE=10V 5 tr 500 400 1 0.01 0.1 1 300 0.01 IC - Collector Current (Amps) 50 0 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10 80 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 VCE=10V 60 40 20 0.001 0.8 0.1 1 0.001 hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1 VBE - (Volts) 0.8 0.6 0.4 0.1 0.01 IC - Collector Current (Amps) VCE=10V 1 Single Pulse Test at Tamb=25°C 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX454 0.0001 0.001 0.01 0.1 1 ZTX455 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-180 SYMBOL ZTX454 ZTX455 UNIT Collector-Base Voltage VCBO 140 160 V Collector-Emitter Voltage VCEO 120 140 Emitter-Base Voltage VEBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX454 V UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 140 160 V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 120 140 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA µA VCB=140V VCB=120V Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.7 1.0 0.7 V IC=150mA, IB=15mA IC=200mA, IB=20mA Static Forward Current Transfer Ratio hFE 100 30 10† Transition Frequency fT 100 Output Capacitance Cobo MIN. IC - Collector Current (Amps) 1.0 PARAMETER 0.4 10 1.2 ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 0.2 0.01 E E-Line TO92 Compatible 100 td 0 0.001 td nS 2 100 0 C B 4 3 200 ZTX454 ZTX455 1000 ZTX455 MAX. MIN. 0.1 300 100 MAX. 300 IC=150mA, VCE=10V* IC=200mA, VCE=1V* IC=1A, VCE=10V* 10† 100 15 15 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% † Typical 3-179