ZTX549STZ

ZTX549 ZTX549A ZTX549 ZTX549A PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Transition Frequency fT 100 TYP. MAX. Output Capacitance Cobo pF VCB=-10V, f=1MHz Switching Times ton 300 ns toff 50 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 25 UNIT CONDITIONS. MHz IC=-100mA, VCE=-5V f=100MHz ISSUE 1 – MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -35 Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -35 TYP. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.50 -0.50 -0.75 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* -0.30 V IC=-100mA, IB=-1mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(on) -0.85 -1 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE ZTX549A 70 80 40 MAX. 200 130 80 IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* ZTX549 100 160 300 IC=-500mA, VCE=-2V* ZTX549A 150 200 500 IC=-500mA, VCE=-2V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-192 3-191 ZTX549 ZTX549A ZTX549 ZTX549A PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Transition Frequency fT 100 TYP. MAX. Output Capacitance Cobo pF VCB=-10V, f=1MHz Switching Times ton 300 ns toff 50 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA 25 UNIT CONDITIONS. MHz IC=-100mA, VCE=-5V f=100MHz ISSUE 1 – MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -35 Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -35 TYP. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.50 -0.50 -0.75 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* -0.30 V IC=-100mA, IB=-1mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(on) -0.85 -1 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE ZTX549A 70 80 40 MAX. 200 130 80 IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* ZTX549 100 160 300 IC=-500mA, VCE=-2V* ZTX549A 150 200 500 IC=-500mA, VCE=-2V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-192 3-191 ZTX549 ZTX549A TYPICAL CHARACTERISTICS ts (ns) IB1=IB2=IC/10 1800 1600 td,tr,tf (ns) 180 0.8 160 1400 120 Switching time VCE(sat) - (Volts) 140 0.6 IC/IB=100 0.4 IC/IB=10 0.2 ts 100 1200 tr 1000 80 800 td 60 600 40 400 tf 20 0 0.01 0.1 1 0 10 1 0 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 200 160 1.2 VCE=2V VBE(sat) - (Volts) hFE - Gain 0.1 0.01 IC - Collector Current (Amps) 200 120 80 40 1.0 IC/IB=100 IC/IB=10 0.8 0.6 0.001 0.01 0.1 1 0.01 10 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.0 VBE - (Volts) IC/IB=10 0.9 0.8 0.7 0.001 1 IC - Collector Current (Amps) 0.01 0.1 1 10 Single Pulse Test at Tamb=25°C 10 0.6 0.1 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.3ms 0.1ms 10 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-193 100