ZTX605STOB

ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ZTX605 MAX. 100K MIN. 2K 5K 2K 0.5K UNIT CONDITIONS. MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz 90 Typical pF VEB=500mV, f=1MHz 15 Typical pF VCB=10V, f=1MHz ton 0.5 Typical µs toff 1.6 Typical µs IC=500mA, VCE=10V IB1=IB2=0.5mA Maximum Power Dissipation (W) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 1.0 RS = 20KΩ RS = 100KΩ RS = 1MΩ 0.8 RS = ∞ ISSUE 1 – MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B PARAMETER SYMBOL ZTX604 ZTX605 0 10 100 200 VCE - Collector-Emitter Voltage (Volts) Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation Power(max ) − Power(act) T amb (max ) = 0.0057 +25° C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-213 ZTX605 UNIT V Collector-Base Voltage VCBO 120 140 Collector-Emitter Voltage VCEO 100 120 Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX604 V UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 120 140 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 100 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µA Collector Cut-Off Current ICBO 10 µA µA µA µA VCB=100V VCB=120V VCB=100V,Tamb=100°C VCB=120V,Tamb=100°C 0.1 µA VEB=8V µA VCES=100V VCES=120V MIN. 1 ZTX604 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). DC Conditions 0.2 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.6 0.4 ZTX604 ZTX605 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS MAX. 0.01 10 ZTX605 MIN. MAX. 0.01 Emitter Cut-Off Current IEBO 0.1 Colllector-Emitter Cut-Off Current ICES 10 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 1.7 V IC=1A, VCE=5V* 3-212 10 ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ZTX605 MAX. 100K MIN. 2K 5K 2K 0.5K UNIT CONDITIONS. MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz 90 Typical pF VEB=500mV, f=1MHz 15 Typical pF VCB=10V, f=1MHz ton 0.5 Typical µs toff 1.6 Typical µs IC=500mA, VCE=10V IB1=IB2=0.5mA Maximum Power Dissipation (W) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 1.0 RS = 20KΩ RS = 100KΩ RS = 1MΩ 0.8 RS = ∞ ISSUE 1 – MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B PARAMETER SYMBOL ZTX604 ZTX605 0 10 100 200 VCE - Collector-Emitter Voltage (Volts) Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation Power(max ) − Power(act) T amb (max ) = 0.0057 +25° C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-213 ZTX605 UNIT V Collector-Base Voltage VCBO 120 140 Collector-Emitter Voltage VCEO 100 120 Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL ZTX604 V UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 120 140 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 100 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µA Collector Cut-Off Current ICBO 10 µA µA µA µA VCB=100V VCB=120V VCB=100V,Tamb=100°C VCB=120V,Tamb=100°C 0.1 µA VEB=8V µA VCES=100V VCES=120V MIN. 1 ZTX604 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). DC Conditions 0.2 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.6 0.4 ZTX604 ZTX605 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS MAX. 0.01 10 ZTX605 MIN. MAX. 0.01 Emitter Cut-Off Current IEBO 0.1 Colllector-Emitter Cut-Off Current ICES 10 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 1.7 V IC=1A, VCE=5V* 3-212 10 ZTX604 ZTX605 TYPICAL CHARACTERISTICS -55°C +25°C +100°C +175°C VCE(sat) - (Volts) 1.6 1.4 2.5 1.2 IC/IB=100 1.0 0.8 0.6 0.4 0.2 0 0.01 1 10 1.0 0.5 0.001 0.01 0.1 1 hFE v IC 1.8 2.2 1.8 VBE - (Volts) 1.6 1.4 1.2 IC/IB=100 1.0 1.6 1.4 1.2 1.0 0.8 0.8 0.6 0.6 0.01 0.1 1 0.01 0.1 VBE(on) v IC Single Pulse Test at Tamb=25°C 10 1.0 ZT X6 04 ZTX605 0.01 100 1 IC - Collector Current (Amps) VBE(sat) v IC 10 VCE=5V 0.4 10 IC - Collector Current (Amps) D.C. 1s 100ms 10ms 1.0ms 100µs 10 -55°C +25°C +100°C 2.0 0.4 IC - Collector Current (Amps) 1.5 VCE(sat) v IC -55°C +25°C +100°C +175°C 1 VCE=5V 2.0 IC - Collector Current (Amps) 2.2 0.1 -55°C +25°C +100°C IC - Collector Current (Amps) 2.0 VBE(sat) - (Volts) 0.1 hFE - Gain normalised to 1 Amp 1.8 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-214 10