ZTX651STOA

ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo 30 IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) 175 116 70 °C/W °C/W °C/W 2.0 1.5 Am 0.5 0 -40 -20 0 20 40 bie e nt t te m em pe E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX650 ZTX651 UNIT Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 45 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A IC 2 A 1 5.7 W mW/°C -55 to +200 °C ra PARAMETER per tu re at u re 60 80 100 120 140 160 180 200 D=t1/tP tP 100 Ptot Tj:Tstg SYMBOL ZTX650 MIN. TYP. ZTX651 MAX. MIN. TYP. D=0.1 Single Pulse 0.001 0.01 0.1 1 10 V 100 Pulse Width (seconds) Derating curve Maximum transient thermal impedance MAX. UNIT CONDITIONS. 60 80 V IC=100µA Collector-Emitter V(BR)CEO Breakdown Voltage 45 60 V IC=10mA* Emitter-Base V(BR)EBO Breakdown Voltage 5 5 V IE=100µA 10 µA µA µA µA VCB=45V VCB=60V VCB=45V,Tamb=100°C VCB=60V,Tamb=100°C 0.1 µA VEB=4V 0.1 ICBO 0.1 10 D=0.2 0 0.0001 60 Collector-Base V(BR)CBO Breakdown Voltage Collector Cut-Off Current D=0.5 T -Temperature (°C) 3-220 at Tamb=25°C derate above 25°C Operating and Storage Temperature Range D=1 (D.C.) t1 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 as C B Power Dissipation † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. C ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt Continuous Collector Current THERMAL CHARACTERISTICS 1.0 ZTX650 ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Emitter Cut-Off Current IEBO 0.1 Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.23 0.3 0.5 0.12 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V* 3-219 ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo 30 IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) 175 116 70 °C/W °C/W °C/W 2.0 1.5 Am 0.5 0 -40 -20 0 20 40 bie e nt t te m em pe E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX650 ZTX651 UNIT Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 45 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A IC 2 A 1 5.7 W mW/°C -55 to +200 °C ra PARAMETER per tu re at u re 60 80 100 120 140 160 180 200 D=t1/tP tP 100 Ptot Tj:Tstg SYMBOL ZTX650 MIN. TYP. ZTX651 MAX. MIN. TYP. D=0.1 Single Pulse 0.001 0.01 0.1 1 10 V 100 Pulse Width (seconds) Derating curve Maximum transient thermal impedance MAX. UNIT CONDITIONS. 60 80 V IC=100µA Collector-Emitter V(BR)CEO Breakdown Voltage 45 60 V IC=10mA* Emitter-Base V(BR)EBO Breakdown Voltage 5 5 V IE=100µA 10 µA µA µA µA VCB=45V VCB=60V VCB=45V,Tamb=100°C VCB=60V,Tamb=100°C 0.1 µA VEB=4V 0.1 ICBO 0.1 10 D=0.2 0 0.0001 60 Collector-Base V(BR)CBO Breakdown Voltage Collector Cut-Off Current D=0.5 T -Temperature (°C) 3-220 at Tamb=25°C derate above 25°C Operating and Storage Temperature Range D=1 (D.C.) t1 E ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 as C B Power Dissipation † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. C ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt Continuous Collector Current THERMAL CHARACTERISTICS 1.0 ZTX650 ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Emitter Cut-Off Current IEBO 0.1 Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.23 0.3 0.5 0.12 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V* 3-219 ZTX650 ZTX651 TYPICAL CHARACTERISTICS 0.6 0.5 IC/IB=10 175 hFE - Gain VCE(sat) - (Volts) 225 0.4 0.3 0.2 VCE=2V 125 0.1 75 0 0.0001 0.001 0.01 0.1 1 0 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 1.2 1.0 1.0 VBE - (Volts) VBE(sat) - (Volts) 1.2 IC/IB=10 0.8 VCE=2V 0.8 0.6 0.6 0.4 0.0001 0.01 0.1 1 10 0.0001 0.01 0.1 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 1 10 Single Pulse Test at Tamb=25°C td tr tf ns 140 Switching time 1 0.1 0.001 IC - Collector Current (Amps) 10 IC - Collector Current (Amps) 0.001 D.C. 1s 100ms 10ms 1.0ms 100µs 0.01 0.1 120 1200 100 1000 80 800 60 600 40 400 20 200 0 ZTX650 ZTX651 ZTX650/51-5 1 10 IB1=IB2=IC/10 ts ns 1400 0 0.01 ts td tf tr 0.1 100 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3-221 1