ZTX788B

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX788B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 25 pF VCB=-10V, f=1MHz ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX788B ISSUE 2 – APRIL 94 FEATURES * 15 Volt VCEO * Gain of 300 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -15 Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range tj:tstg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-274 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -15 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -15 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-10V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.25 -0.45 V V V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-1A, IB=-5mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.75 500 400 300 150 3-273 1500 IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX788B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 25 pF VCB=-10V, f=1MHz ton toff 35 400 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case MAX. UNIT 175 116 70 °C/W °C/W °C/W † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX788B ISSUE 2 – APRIL 94 FEATURES * 15 Volt VCEO * Gain of 300 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -15 Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range tj:tstg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 D=t1/tP tP 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-274 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -15 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -15 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-10V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.25 -0.45 V V V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-1A, IB=-5mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE -0.75 500 400 300 150 3-273 1500 IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* ZTX788B TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C 1.6 1.4 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.8 0.6 0.4 0.2 0 0.1 1 0.01 1 10 VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 1200 900 1.0 0.8 600 0.6 0.4 300 VBE(sat) - (Volts) 1.2 1.4 0.2 -55°C +25°C +100°C +175°C IC/IB=200 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 1 0 VBE(sat) v IC -55°C +25°C +100°C VCE=2V 1.4 1.0 0.8 0.6 0.4 0.2 0 1 IC - Collector Current (Amps) 1.2 0 0.1 hFE v IC IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 10 VBE - (Volts) 0.1 IC - Collector Current (Amps) hFE - Typical Gain 1.4 10 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 hFE - Normalised Gain 1.0 0.2 0.01 0 IC/IB=200 1.2 0.4 0 -55°C +25°C +100°C +175°C 0.01 0.1 1 IC - Collector Current (Amps) Single Pulse Test at Tamb=25°C 1 0.1 0.01 0.1 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-275 10 100