ZTX955STZ

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 110 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 40 pF VCB=-20V, f=1MHz Switching Times ton toff 68 1030 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V 200 200 140 10 100 100 75 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 A Continuous Collector Current IC SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg Thermal Resistance: Junction to Ambient Junction to Case ZTX955 ISSUE 3 – JUNE 94 FEATURES * 3 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 3 Amps * Spice model available -3 A 1.58 W 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -180 -210 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -180 -210 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -140 -170 V IC=-10mA* D=0.6 Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA D=0.2 Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-150V VCB=-150V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-150V VCB=-150V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -30 -60 -90 -250 -60 -100 -120 -330 mV mV mV mV IC=-100mA, IB=-5mA* IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* Base-Emitter Saturation Voltage VBE(sat) -920 -1050 mV IC=-3A, IB=-300mA* D.C. 150 t1 100 PARAMETER D=t1/tP tP 50 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-322 3-321 MAX. PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 110 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 40 pF VCB=-20V, f=1MHz Switching Times ton toff 68 1030 ns ns IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V 200 200 140 10 100 100 75 IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 A Continuous Collector Current IC SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg Thermal Resistance: Junction to Ambient Junction to Case ZTX955 ISSUE 3 – JUNE 94 FEATURES * 3 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 3 Amps * Spice model available -3 A 1.58 W 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -180 -210 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -180 -210 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -140 -170 V IC=-10mA* D=0.6 Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA D=0.2 Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-150V VCB=-150V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-150V VCB=-150V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -30 -60 -90 -250 -60 -100 -120 -330 mV mV mV mV IC=-100mA, IB=-5mA* IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* Base-Emitter Saturation Voltage VBE(sat) -920 -1050 mV IC=-3A, IB=-300mA* D.C. 150 t1 100 PARAMETER D=t1/tP tP 50 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-322 3-321 MAX. ZTX955 TYPICAL CHARACTERISTICS IC/IB=50 1.6 1.6 VCE(sat) - (Volts) VCE(sat) - (Volts) -55°C +25°C +175°C Tamb=25°C IC/IB=10 1.4 1.2 1.0 0.8 0.6 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 0.001 0.01 0.1 1 0 10 20 0.001 IC - Collector Current (Amps) 0.01 VCE=5V 200 0.8 0.6 100 0.4 VBE(sat) - (Volts) 1.0 IC/IB=10 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 10 20 1 0 0.001 1.4 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=5V 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 10 VBE - (Volts) 10 20 1.4 1.2 0 -55°C +25°C +100°C +175°C 1.6 300 hFE - Typical Gain hFE - Normalised Gain 1.4 1 VCE(sat) v IC +100°C +25°C -55°C 1.6 0.1 IC - Collector Current (Amps) VCE(sat) v IC 0 IC/IB=10 0.01 0.1 1 10 20 Single Pulse Test at Tamb=25°C 1 0.1 0.01 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-323 10 20 1000