ZUMTS17HTC

SOT323 NPN SILICON PLANAR RF TRANSISTORS ZUMTS17 ZUMTS17H ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — ZUMTS17 - T4 ZUMTS17H - T4H ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 25 V V CEO 15 V Emitter-Base Voltage V EBO 2.5 V Peak Pulse Current I CM 50 mA Continuous Collector Current IC 25 mA 330 mW -55 to +150 °C Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector Cut-Off Current I CBO Static Forward Current Transfer Ratio h FE ZUMTS17H Transition Frequency fT MIN. TYP. MAX. UNIT CONDITIONS. 10 10 nA µA V CB=10V, I E=0 V CB=10V, I E=0, T amb = 100°C 25 20 150 125 I C=2.0mA, V CE=1.0V I C=25mA, V CE=1.0V 70 200 I C=2.0mA, V CE=1.0V 1.0 GHz I C=2.0mA, V CE=5.0V f=500MHz I C=25mA, V CE=5.0V f=500MHz 1.3 GHz 0.85 pF IC=2.0mA, VCE=5V, f=1MHz Feedback Capacitance -C re Collector Capacitance C Tc 1.5 pF IE=Ie=0, VCB=10V, f=1MHz Emitter Capacitance C Te 2.0 pF IC=Ic=0, VEB=5.0V, f=1MHz Noise Figure N 4.5 dB I C=2.0mA, V CE=5.0V R S=50Ω, f=500MHz Intermodulation Distortion d im -45 dB I C=10mA, V CE=6.0V R L =37.5Ω,T amb=25°C Vo=100mV at fp=183MHz Vo=100mV at fq=200MHz measured at f(2q-p) =217MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device ZUMTS17 ZUMTS17H TYPICAL CHARACTERISTICS 80 hFE - Normalised Gain f T - (GHz) 3 f=400MHz 2 VCE=10V VCE=5V 1 0 0.1 1 100 10 1000 IC - Collector Current (mA) CRE - (pF) 40 20 1µ 10µ 100µ 1m 10m 100m IC - Collector Current (A) hFE v IC fT v IC 2.0 VCE=10V 60 f=1MHz 1.5 1.0 0.5 0 10 20 30 VCE - (V) CRE v VCE 3-