ZVN0545A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volts VDS * RDS(on)= 50Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 450 V Continuous Drain Current at T amb=25°C ID 90 mA Pulsed Drain Current I DM 600 mA Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 450 Gate-Source Threshold Voltage V GS(th) 1 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 3 V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 400 µA µA V DS=450 V, V GS=0 V DS=405 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25 V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=100mA Forward Transconductance(1)(2) g fs mS V DS=25V,I D=100mA Input Capacitance (2) C iss 70 pF Common Source Output Capacitance (2) C oss 10 pF Reverse Transfer Capacitance (2) C rss 4 pF Turn-On Delay Time (2)(3) t d(on) 7 ns 150 50 100 Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 10 ns 3-357 V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=100mA ( 1