ZVN3306FTA

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C ID 150 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. 2.4 V I D =1mA, V GS =0V V I D =1mA, V DS = V GS Gate-Body Leakage I GSS 20 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 0.5 50 µA µA V DS =60V, V GS =0V V DS =48V, V GS =0V, T=125°C (2) mA V DS =18V, V GS =10V 5 Ω V GS =10V, I D =500mA mS V DS =18V, I D =500mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs 750 150 Input Capacitance (2) C iss 35 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) t d(on) 3 typ 5 ns Rise Time (2)(3) tr 4 typ 7 ns Turn-Off Delay Time (2)(3) t d(off) 4 typ 6 ns Fall Time (2)(3) tf 5 typ 8 ns V DS =18V, V GS =0V, f=1MHz V DD ≈18V, I D =500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and