ZVN4310A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT Input Capacitance (2) C iss TYP. 350 pF Common Source Output Capacitance (2) C oss 140 pF Reverse Transfer Capacitance (2) C rss 30 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 25 ns Turn-Off Delay Time (2)(3) t d(off) 30 ns Fall Time (2)(3) tf 16 ns CONDITIONS. ABSOLUTE MAXIMUM RATINGS. PARAMETER Thermal Resistance (°C/W) 1.0 0.75 Am tt en bi em pe tu ra re Max Power Dissipation - (Watts) Thermal Resistance:Junction to Ambient Junction to Case -40 -20 0 20 40 S E-Line TO92 Compatible V DD ≈25V, V GEN=10V, I D=3A R GS=50Ω THERMAL CHARACTERISTICS 0.25 D G V DS=25 V, V GS=0V, f=1MHz (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and