ZVN4424ZTA

NOT RECOMMENDED FOR NEW DESIGN USE DMN30H4D0L SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 Volt BVDS * Extremely low RDS(on)=4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc convertors N O T FO R R EC N O EW M M D EN ES D IG ED N D PARTMARKING DETAILS COMPLEMENTARY TYPE - S D G N24 ZVP4424Z ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 240 V Continuous Drain Current at Tamb=25°C ID 300 mA Pulsed Drain Current IDM 1.0 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1† W -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm Refer to the handling instructions for soldering surface mount components. ZVN4424Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS TYP MAX. UNIT Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS On State Drain-Current ID(on) Zero Gate Voltage Drain Current IDSS Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs Input Capacitance (2) Ciss 110 200 pF Common Source Output Capacitance (2) Coss 15 25 pF Reverse Transfer Capacitance (2) Crss 3.5 15 pF Turn-On Delay Time (2)(3) td(on) 2.5 5 ns V CONDITIONS. ID=1mA, VGS=0V N O T FO R R EC N O EW M M D EN ES D IG ED N 240 0.8 1.3 0.8 1.4 1.8 100 4 4.3 0.4 V ID=1mA, VDS= VGS nA VGS=± 40V, VDS=0V A VDS=10V, VGS=10V 10 100 µA µA VDS=240 V, VGS=0V VDS=190 V, VGS=0V, T=125°C 5.5 6 Ω Ω VGS=10V,ID=500mA* VGS=2.5V,ID=100mA* S VDS=10V,ID=0.5A 0.75 Rise Time (2)(3) tr 5 8 ns Turn-Off Delay Time (2)(3) td(off) 40 60 ns Fall Time (2)(3) tf 16 25 ns VDS=25V, VGS=0V, f=1MHz VDD ≈50V, ID =0.25A, VGEN=10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and