P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP0545A
ISSUE 2 MARCH 94
FEATURES
* 450 Volt VDS
* RDS(on)=150Ω
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
VALUE
UNIT
-450
V
Continuous Drain Current at Tamb=25°C
ID
-45
mA
Pulsed Drain Current
IDM
-400
mA
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
700
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
-450
Gate-Source Threshold
Voltage
VGS(th)
-1.5
MAX. UNIT CONDITIONS.
V
ID=-1mA, VGS=0V
-4.5
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-20
-2
µA
mA
VDS=-450 V, VGS=0
VDS=-360 V, VGS=0V,
T=125°C(2)
mA
VDS=-25 V, VGS=-10V
Ω
VGS=-10V,ID=-50mA
mS
VDS=-25V,ID=-50mA
On-State Drain Current(1)
ID(on)
Static Drain-Source
On-State Resistance (1)
RDS(on)
Forward Transconductance
(1)(2)
gfs
-100
150
40
Input Capacitance (2)
Ciss
120
pF
Common Source Output
Capacitance (2)
Coss
20
pF
Reverse Transfer
Capacitance (2)
Crss
5
pF
Turn-On Delay Time (2)(3)
td(on)
10
ns
Rise Time (2)(3)
tr
15
ns
Turn-Off Delay Time (2)(3)
td(off)
15
ns
Fall Time (2)(3)
tf
20
ns
VDS=-25 V, VGS=0V, f=1MHz
VDD ≈ -25V, ID=-50mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
3-413
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