ZVP2106ASTZ

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS -3.5 VGS= -20V -18V -14V -3.0 -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -7V -6V -0.5 -5V -4V 0 0 -10 -20 -30 -40 -50 -2.0 -1.8 VGS= -10V -1.6 -1.4 -1.2 -9V -1.0 -8V -0.8 -7V -0.6 -6V -0.4 -5V -4V -3.5V -0.2 0 0 VDS - Drain Source Voltage (Volts) VDS-Drain Source Voltage (Volts) -8 -6 -4 ID= -1A -2 -0.5A -0.25A 0 -2 -4 -6 -8 -10 -1.0 VDS=-10V -0.8 -0.6 -0.4 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -60 V Continuous Drain Current at T amb=25°C ID -280 mA Pulsed Drain Current I DM -4 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS -60 Gate-Source Threshold Voltage V GS(th) -1.5 MAX. UNIT CONDITIONS. V I D=-1mA, V GS=0V -3.5 V ID=-1mA, V DS= V GS -0.2 0 -2 -4 -6 -8 -10 Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS -0.5 -100 µA µA V DS=-60 V, V GS=0 V DS=-48 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS=-18 V, V GS=-10V 5 Ω V GS=-10V,I D=-500mA mS V DS=-18V,I D=-500mA -1 Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) 2.6 -2.0 ID-Drain Current (Amps) On-resistance v drain current ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.2 -7V -8V -9V -10V -1.0 2.4 2.2 n) (o DS 2.0 1.8 1.6 1.4 Dr 1.2 1.0 Gate Thresh old 0.8 0.6 eR nc ta sis e eR rc ou -S n ai VGS=-10V ID=-0.5A VGS=VDS ID=-1mA Voltage VGS (th ) -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3-418 S E-Line TO92 Compatible VGS-Gate Source Voltage (Volts) 5 1 -0.1 D G -10 Transfer Characteristics Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) -6V -8 -1.4 VGS-Gate Source Voltage (Volts) VGS=-5V -6 -1.6 Voltage Saturation Characteristics 10 -4 Saturation Characteristics ID(On)-On-State Drain Current (Amps) Output Characteristics 0 -2 VDS - Drain Source Voltage (Volts) -10 ZVP2106A g fs 150 Input Capacitance (2) C iss 100 pF Common Source Output Capacitance (2) C oss 60 pF Reverse Transfer Capacitance (2) C rss 20 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns V DS=-18V, V GS=0V, f=1MHz V DD ≈-18V, I D=-500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-417 Switching times measured with 50Ω source impedance and