ZX5T849GTA

ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extemely low equivalent on-resistance; RSAT = 28m at 6.5A SOT223 • 7 amps continuous current • Up to 20 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 20 amps APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZX5T849GTA 7” 13" 12mm embossed 1000 units ZX5T849GTC 4000 units DEVICE MARKING • X5T849 TOP VIEW ISSUE 1 - NOVEMBER 2003 1 SEMICONDUCTORS ZX5T849G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO 80 Collector-emitter voltage BV CEO 30 V Emitter-base voltage BV EBO 7 V Continuous collector current (a) IC 7 A Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) PD 3.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 24 mW/°C PD 1.6 W 12.8 mW/°C Operating and storage temperature range T j , T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R ⍜JA 42 °C/W Junction to ambient (b) R ⍜JA 78 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 2 ZX5T849G CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 3 SEMICONDUCTORS ZX5T849G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 80 125 MAX. UNIT CONDITIONS V I C =100␮A I C =1␮A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CER 80 125 V Collector-emitter breakdown voltage BV CEO 30 40 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100␮A Collector cut-off current I CBO Collector cut-off current 20 nA V CB =70V 0.5 ␮A VCB=70V, Tamb=100⬚C I CER 20 nA V CB =70V Rⱕ1k⍀ 0.5 ␮A VCB=70V, Tamb=100⬚C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) 10 nA 25 35 mV I C =0.5A, I B =20mA* 35 50 mV IC=1A, IB=100mA* 50 65 mV IC=1A, IB=20mA* 100 125 mV IC=2A, IB=20mA* IC=6.5A, IB=300mA* 185 220 mV Base-emitter saturation voltage V BE(SAT) 1025 1130 mV I C =6.5A, I B =300mA* Base-emitter turn-on voltage V BE(ON) 920 1000 mV I C =6.5A, V CE =1V* Static forward current transfer ratio h FE 100 175 100 200 100 150 IC=7A, VCE=1V* 20 30 IC=20A, VCE=1V* 140 I C =10mA, V CE =1V* IC=1A, VCE=1V* 300 MHz IC =100mA, VCE =10V Transition frequency fT Output capacitance C OBO 48 pF V CB =10V, f=1MHz* Switching times t ON 37 ns t OFF 425 I C =1A, V CC =10V, I B1 =-I B2 =100mA f=50MHz * Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 4 ZX5T849G TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 5 SEMICONDUCTORS ZX5T849G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 6