ZX5T851ZTA

ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 30mV at 6A SOT89 • 5 amps continuous current • Up to 20 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 10 amps APPLICATIONS • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC-DC modules • Backlight inverters • Power switches PINOUT • MOSFET gate drivers ORDERING INFORMATION DEVICE ZX5T851ZTA REEL SIZE TAPE WIDTH QUANTITY PER REEL 7” 12mm embossed 1000 units DEVICE MARKING TOP VIEW • 851 ISSUE 2 - DECEMBER 2004 1 SEMICONDUCTORS ZX5T851Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO 150 Collector-emitter voltage BV CEO 60 V Emitter-base voltage BV EBO 7 V Continuous collector current (a) IC 5 A Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) PD 1.5 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 12 mW/°C PD 2.1 W 16.8 mW/°C Operating and storage temperature range T j , T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL (a) Junction to ambient (b) Junction to ambient VALUE UNIT R ⍜JA 83 °C/W R ⍜JA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - DECEMBER 2004 SEMICONDUCTORS 2 ZX5T851Z CHARACTERISTICS ISSUE 2 - DECEMBER 2004 3 SEMICONDUCTORS ZX5T851Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 150 190 MAX. UNIT CONDITIONS V I C =100␮A I C =1␮A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CER 150 190 V Collector-emitter breakdown voltage BV CEO 60 80 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100␮A Collector cut-off current I CBO Collector cut-off current 20 nA V CB =120V 0.5 ␮A VCB=120V,Tamb=100⬚C I CER 20 nA V CB =120V R ⱕ 1k⍀ 0.5 ␮A VCB=120V,Tamb=100⬚C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) 10 nA 17 30 mV I C =100mA, I B =5mA* 35 55 mV IC=1A, IB=100mA* 40 65 mV IC=1A, IB=50mA* 90 125 mV IC=2A, IB=50mA* 170 230 mV IC=6A, IB=300mA* Base-emitter saturation voltage V BE(SAT) 970 1100 mV I C =6A, I B =300mA* Base-emitter turn-on voltage V BE(ON) 910 1050 mV Static forward current transfer ratio H FE Transition frequency 200 I C =10mA, V CE =1V* IC=2A, VCE=1V* 100 200 55 105 IC=5A, VCE=1V* 20 40 IC=10A, VCE=1V* 300 130 fT I C =6A, V CE =1V* 100 I C =100mA, V CE =10V f=50MHz Output capacitance C OBO 31 pF V CB =10V, f=1MHz* Switching times t ON 42 ns t OFF 760 I C =1A, V CC =10V, I B1 =I B2 =100mA * Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%. ISSUE 2 - DECEMBER 2004 SEMICONDUCTORS 4 ZX5T851Z TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2004 5 SEMICONDUCTORS ZX5T851Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 c 0.28 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2004 SEMICONDUCTORS 6