ZX5T949ZTA

ZX5T949Z MPPS™ 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. SOT89 FEATURES • 5.5 Amps continuous current • Up to 20 Amps peak current • Very low saturation voltages • Exceptional gain linearity down to 10mA • Excellent high current gain hold up APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL 7" 12mm embossed 1000 units ZX5T949ZTA DEVICE MARKING TOP VIEW • 949 ISSUE 3 - DECEMBER 2004 1 SEMICONDUCTORS ZX5T949Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -50 V Collector-emitter voltage BV CEO -30 V BV EBO -7 V Emitter-base voltage (a) IC -5.5 A Peak pulse current I CM -20 A Power dissipation at T A =25°C (a) PD 1.5 W 12 mW/°C Continuous collector current Linear derating factor Power dissipation at T A =25°C (b) PD Linear derating factor 2.1 W 16.8 mW/°C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R ⍜JA 83 °C/W (b) R ⍜JA 60 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 3 - DECEMBER 2004 SEMICONDUCTORS 2 ZX5T949Z CHARACTERISTICS ISSUE 3 - DECEMBER 2004 3 SEMICONDUCTORS ZX5T949Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage MAX. UNIT CONDITIONS BV CBO -50 -70 V I C = -100␮A Collector-emitter breakdown voltage BV CER -50 -70 V I C = -1␮A, RB