ZX5T955ZTA

ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. Features • 3 amps continuous current • Up to 10 amps peak current • Very low saturation voltages Applications C • Motor driving • Line switching • High side switches • Subscriber line interface cards (SLIC) B E Ordering Information Device ZX5T955TA Reel Size Tape Width Quantity Per Reel 7” 12mm 1000 Device Marking E 955 C C B Pinout - top view Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 1 www.zetex.com ZX5T955Z. Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage BVCBO -180 V Collector-emitter voltage BVCEO -140 V Emitter-base voltage BVEBO -7 V IC -3 A Peak pulse current ICM -10 A Power dissipation at Tamb=25°C(a) Linear derating factor PD 1.5 12 W mW/oC Power dissipation at Tamb=25°C(b) Linear derating factor PD 2.1 16.8 W mW°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 83 °C/W Junction to ambient(b) R⍜JA 60 °C/W Continuous collector current(a) Operating and storage temperature range Thermal resistance Parameter (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 2 www.zetex.com ZX5T955Z. Characteristics Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 3 www.zetex.com ZX5T955Z. Electrical Characteristics (at Tamb =25oC unless otherwise stated) Parameter Symbol Min. Typ. Collector-Base breakdown voltage BVCBO -180 -200 V IC = -100␮A Collector-Emitter breakdown BVCER voltage -180 -200 V IC = -100␮A, RB