ZXGD3109N8TC

PART OBSOLETE NO ALTERNATE PART ZXGD3109N8 OBSOLETE – PART DISCONTINUED SYNCHRONOUS MOSFET CONTROLLER IN SO-8 Description Features The ZXGD3109N8 is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a high-voltage detector stage and gate driver. The detector monitors the voltage between the drain and the source of the MOSFET, and if this voltage is less than the turn-on threshold voltage of the controller, a positive voltage is applied to the MOSFET’s Gate Pin. As the load current decays to zero, and the voltage between the drain and source of the MOSFET increases beyond the turn-off threshold value, the MOSFET is rapidly turned off.   Intelligent features of this IC are the Minimum Off-Time (TOFF) and Minimum On-Time (TON). These features blanket the noise generated during the turn-on and turn-off instances of the power FET. Also Light Load Detection (LLD) for improved efficiency at light and no load, where synchronous rectification is no more beneficial. Other features include, Undervoltage Lockout (UVLO) and low turn-off threshold voltage for improved efficiency.           Frequency of Operation Up to 500kHz Suitable for Discontinuous Conduction Mode (DCM) and Critical Conduction Mode (CrCM) Minimum On-Time and Off-Time to Reduce Turn-On/Off Oscillations Intelligent Light Load Detection and Sleep Mode Turn-Off Propagation Delay Time of 30ns Typically Drain Voltage Rating of 200V Recommended Operating Voltage from 4.5V up to 12V Source and Sink Current of 2A and 4A Respectively Low Component Count Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications Mechanical Data Flyback Converters in:  Power Adaptors  Auxiliary Power Supplies  PoE Power Devices     Resonant Converters in:  High Power Adaptors  85+/90+ Compliant ATX and Server Power Supplies  Case: SO-8 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) TON VCC GND TOFF/EN SO-8 Top view VS GATE VD PGATE Top View Pin-Out Ordering Information (Note 4) Product ZXGD3109N8TC Notes: Marking ZXGD3109 Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain 0.2V V µA Undervoltage Lockout (UVLO) UVLOTH VCC Undervoltage Lockout Threshold Rising — 2.8 3.0 3.20 V UVLOHYS VCC Undervoltage Lockout Threshold Hysteresis — — 200 — mV VD to GND, Rising -1.3 1.5 -1.7 V (VD-VS) Falling, VS = 0V -220 -150 -80 mV -30 -20 -10 mV -10 -4 -1 mV MOSFET Voltage Sensing VTHARM Gate Re-Arming Threshold VTHON Gate Turn-On Threshold VTHOFFLV Gate Turn-Off Threshold VTHOFFHV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC < 4.3V (VD-VS) Rising, VS = 0V, VCC > 4.3V TD(ON) Gate Turn-On Propagation Delay From VTHON to Gate > 1V — 30 52 ns TD(OFF) Gate Turn-Off Propagation Delay From VTHOFF to Gate < 4V — 30 62 ns Minimum On-Time TON-LR Minimum On-Time Low Resistance RTON = 8.25kΩ 0.26 0.34 0.42 µs TON-HR Minimum On-Time High Resistance RTON = 100kΩ 2.2 3 3.8 µs ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 6 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 Electrical Characteristics (Continued) (@TA = +25°C, unless otherwise specified.) OBSOLETE – PART DISCONTINUED Minimum Off-Time TOFF-LR Minimum Off-Time Low Resistance RTOFF = 100kΩ 1.2 3 5 µs TOFF-HR Minimum Off-Time High Resistance RTOFF = 200kΩ 15 21 25 µs TOFF-LV Minimum Off-Time Low Voltage VEN/TOFF = 1V — 3 — µs TOFF-HV Minimum Off-Time High Voltage VEN/TOFF = 2V — 21 — µs TOFF-OV Minimum Off-Time Over Voltage 2V < VEN/TOFF < VAVDD — 21 — µs RGUP Gate Pull-Up Resistance Enabled IGATE = -100mA — 2.3 — RGDN Gate Pull-Down Resistance Enabled IGATE = 100mA — 1.1 — Peak Gate Source Current CGATE = 22nF — 3 — ISINK Peak Gate Sink Current CGATE = 22nF — 4 — VCC = 5V 4.7 — — VOHG Gate Output High Voltage VCC = 12V 9 — — VCC = 5V — — 0.3 4V to 1V, CGATE = 3,300pF, VCC = 5V — 14 42 9V to 1V, CGATE = 3,300pF, VCC = 12V — 20 42 1V to 4V, CGATE = 3,300pF, VCC = 5V — 16 42 1V to 10V, CGATE = 3,300pF, VCC = 12V — 20 42 EN Falling to Gate Falling — 160 — Overtemperature — — +150 — °C Temperature to Recover from Overtemperature Exception — — +125 — °C Gate Driver ISOURCE VOLG TFGATE TRGATE TDIS Gate Output Low Voltage Ω A V Gate Fall Time ns Gate Rise Time Disable Delay (Note 8) Exception Handling TOVER TRECOVER ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 7 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 Typical Application Circuit Less than 12V rails can be directly connected to the Vcc. For more than 12V operation, a regulator arrangement is suggested in the figure. OBSOLETE – PART DISCONTINUED +Vout IN ZXTR2012 OUT GND C3 Transformer Vcc C1 C2 GND ZXGD3109 Drain Source Gate PGATE RTON RTOFF/EN Snubber RTON RTOFF CPGATE G D S - Vout Synchronous MOSFET PWM controller CrCM/DCM C3 of 1µF must be connected CPGATE of 0.1µF must be connected C1 of >10µF must be connected as close as possible to Vcc and ground with minimum track length ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 8 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Typical Performance Characteristics Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 9 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Typical Performance Characteristics (Continued) Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 10 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 OBSOLETE – PART DISCONTINUED Typical Performance Characteristics (Cont.) Figure 13 ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 Figure 14 11 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E 1 b ides All s 9° ( E1 h ) 7° R 0 e c 4° ± 3° A .1 Q 45° OBSOLETE – PART DISCONTINUED SO-8 A1 L E0 Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 X 12 of 13 www.diodes.com March 2020 © Diodes Incorporated ZXGD3109N8 IMPORTANT NOTICE OBSOLETE – PART DISCONTINUED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2020, Diodes Incorporated www.diodes.com ZXGD3109N8 Document Number DS37178 Rev. 2 - 4 13 of 13 www.diodes.com March 2020 © Diodes Incorporated