ZXM41N10FTC

Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage SOT23 VALUE UNIT V DS 100 V V DGR 100 V Continuous drain current at T amb =25°C ID 170 mA Pulsed drain current I DM 680 mA Gate-source voltage V GS ± 20 V Power dissipation at T amb =25°C P tot 360 mW Operating and storage temperature range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-source breakdown voltage BV DSS 100 Gate-source threshold voltage V GS(th) 0.5 Gate-body leakage TYP. MAX. UNIT CONDITIONS V I D =0.25mA, V GS =0V 1.5 V I =1mA, V DS = V GS I GSS 50 nA V GS =±20V, V DS =0V Zero gate voltage drain current I DSS 500 nA V DS =100V, V GS =0V Static drain-source on-state resistance (1) R DS(on) 8 ⍀ ⍀ V GS =4.5V, I D =150mA V GS =3V, I D =50mA Forward transconductance (1)(2) g fs mS V DS =25V, I D =100mA Input capacitance (2) C iss 25 pF Common source output capacitance (2) C oss 9 pF Reverse transfer capacitance (2) C rss 4 pF t d(on) 10 ns Turn-on delay time (2)(3) (2)(3) 12 80 tr 10 ns Turn-off delay time (2)(3) t d(off) 15 ns Fall time (2)(3) tf 25 ns Rise time D V DS =25V, V GS =0V, f=1MHz V DD ≈30V, I D =280mA NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and