ZXM61N02FTA

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM61N02FTA 7 8mm embossed 3000 units ZXM61N02FTC 13 8mm embossed 10000 units DEVICE MARKING • N02 ISSUE 1 - JUNE 2004 1 ZXM61N02F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS ± 12 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b) (V GS=4.5V; T A=70°C)(b) ID 1.7 1.3 A Pulsed Drain Current (c) I DM 7.4 A Continuous Source Current (Body Diode) (b) IS 0.8 A Pulsed Source Current (Body Diode) I SM 7.4 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t