ZXM66P03N8TA

NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SSS ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters • Power management functions • Disconnect switches • Motor control QUANTITY PER REEL ZXM66P03N8TA 7” 12mm 500 units S 8 D ZXM66P03N8TC 13” 12mm 2500 units S 7 D S 6 D DEVICE MARKING • ZXM 5 TAPE WIDTH 2 1 DEVICE 4 REEL SIZE 3 ORDERING INFORMATION Top View 66P03 ISSUE 1 - JANUARY 2006 1 SEMICO NDUC T OR S ZXM66P03N8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS ±20 V ID -7.9 -6.3 -6.25 A I DM -28 A IS -4.1 A I SM -28 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.56 12.5 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 2.5 20 W mW/°C T j :T stg -55 to +150 °C Continuous Drain Current V GS =-10V; T A =25°C(b) V GS =-10V; TA =70°C(b) V GS =-10V; TA =25°C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 80 °C/W Junction to Ambient (b) R θJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t�10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 101-s - pulse width limited by maximum junction temperature. ISSUE 1 - JANUARY 2006 SEMI CONDUCTO RS 2 ZXM66P03N8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-Source Breakdown Voltage V (BR)DSS -30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) g fs 14.4 S Input Capacitance C iss 1979 pF Output Capacitance C oss 743 pF Reverse Transfer Capacitance C rss 279 pF Turn-On Delay Time t d(on) 7.6 ns Rise Time tr 16.3 ns Turn-Off Delay Time t d(off) 94.6 ns Fall Time tf 39.6 ns Gate Charge Qg 36 nC Total Gate Charge Qg 62.5 nC Gate-Source Charge Q gs 4.9 nC Gate Drain Charge Q gd 19.6 nC STATIC V I D =-250µA, V GS =0V -1 µA V DS =-24V, V GS =0V -100 nA -1.0 V 0.025 Ω 0.035 Ω V GS =±20V, V DS =0V I =-250µA, V DS = D V GS V GS =-10V, I D=-5.6A V GS =-4.5V, I D=-2.8A V DS =-15V,I D=-5.6A DYNAMIC (3) V DS =-25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D=-5.6A R G =6.2Ω, V GS =-10V V DS =-15V,V GS =-5V I D=-5.6A V DS =-15V,V GS =-10V I D=-5.6A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V Reverse Recovery Time (3) t rr 35 ns Reverse Recovery Charge(3) Q rr 39.9 nC T j =25°C, I S =-5.6A, V GS =0V T j =25°C, I F =-5.6A, di/dt= 100A/µs (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JANUARY 2006 3 SEMICO NDUC T OR S ZXM66P03N8 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 4.80 4.98 0.189 0.196 B 1.27 BSC 0.05 BSC C 0.53 REF 0.02 REF D 0.36 0.46 0.014 0.018 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.05 0.07 G 0.10 0.25 0.004 0.010 J 5.80 6.20 0.23 0.24 K 0° 8° 0° 8° L 0.41 1.27 0.016 0.050 © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JANUARY 2006 SEMICONDUCTORS 4