ZXMC3A18DN8TA

ZXMC3A18DN8TA

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SO-8

  • 描述:

    MOSFET N/P-CH 30V 8-SOIC

  • 数据手册
  • 价格&库存
ZXMC3A18DN8TA 数据手册
ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025⍀; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035⍀; ID= -6.3A Description D1 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. G1 D2 G2 S1 Features Q1 N-Channel • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package S2 Q2 P-Channel S1 D1 G1 D1 S2 D2 G2 D2 Applications • Motor Drive • LCD backlighting SO8 Ordering information Device ZXMC3A18DN8TC Reel size (inches) Tape width (mm) Quantity per reel 13 12 2500 Device marking ZXMC 3A18 Issue 2 - September 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMC3A18DN8 Absolute maximum ratings Parameter Symbol N-channel P-channel Unit Drain-source voltage VDSS 30 -30 V Gate-source voltage VGS ±20 ±20 V ID 7.6 -6.3 A (VGS= 10V; Tamb=70°C)(b)(d) 6.1 -5.0 (VGS= 10V; Tamb=25°C)(a)(d) 5.8 -4.8 IDM 37 -30 A IS 3.6 3.2 A Pulsed source current (body diode)(c) ISM 37 30 A Power dissipation at Tamb =25°C(a)(d) PD Continuous drain current (VGS= 10V; Tamb=25°C)(b)(d) Pulsed drain current(c) Continuous source current (body diode)(b) 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C Tj, Tstg -55 to +150 °C Linear derating factor PD Power dissipation at Tamb =25°C(a)(e) Linear derating factor PD Power dissipation at Tamb =25°C(b)(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Value Unit ambient(a)(d) RJA 100 °C/W Junction to ambient(a)(e) RJA 70 °C/W Junction to ambient(b)(d) RJA 60 °C/W Junction to NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300s, d
ZXMC3A18DN8TA 价格&库存

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