ZXMD63C02XTC

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=20V; RDS(ON)=0.13V; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27V; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package N-CHANNEL P-CHANNEL APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMD63C02XTA 7 12mm embossed 1000 units ZXMD63C02XTC 13 12mm embossed 4000 units DEVICE MARKING • ZXM63C02 PROVISIONAL ISSUE A - JUNE 1999 1 Top View ZXMD63C02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS N-CHANNEL P-CHANNEL UNIT 20 -20 V -1.7 -1.35 A ± 12 V Gate- Source Voltage V GS Continuous Drain Current (V GS=4.5V; T A=25°C)(b)(d) (V GS=4.5V; T A=70°C)(b)(d) ID Pulsed Drain Current (c)(d) I DM 19 -9.6 A Continuous Source Current (Body Diode)(b)(d) IS -1.5 -1.4 A I SM 19 Pulsed Source Current (Body Diode)(c)(d) 2.4 1.9 -9.6 A Power Dissipation at T A=25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at T A=25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at T A=25°C (b)(d) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 143 °C/W Junction to Ambient (b)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 120 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t