ZXMN2A02X8TA

Not Recommended for New Design Use DMN3025LSS ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET ID = 7.8A N O T FO R R EC N O EW M M D EN ES D IG ED N SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A02X8TA 7” 12mm 1000 units ZXMN2A02X8TC 13” 12mm 4000 units DEVICE MARKING Top View • ZXMN 2A02 ISSUE 2 - JANUARY 2005 1 ZXMN2A02X8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) ID Pulsed Drain Current (c) LIMIT UNIT 20 V V 7.8 6.3 6.2 A I DM 39 A A N O T FO R R EC N O EW M M D EN ES D IG ED N 20 Continuous Source Current (Body Diode) (b) IS 3.1 Pulsed Source Current (Body Diode) (c) I SM 39 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 1.67 13.4 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 74.5 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Refer to transient thermal impedance graph. ISSUE 2 - JANUARY 2005 2 ZXMN2A02X8 CHARACTERISTICS Max Power Dissipation (W) 1.0 N O T FO R R EC N O EW M M D EN ES D IG ED N ID Drain Current (A) 1.2 RDS(on) 10 Limited 1 DC 1s 100ms 100m 10ms 10m Single Pulse Tamb=25°C 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 0.8 0.6 0.4 0.2 0.0 0 20 MaximumPower (W) Thermal Resistance (°C/W) D=0.05 D=0.1 10 80 100 120 140 160 Derating Curve Single Pulse 1 60 Temperature (°C) Safe Operating Area 120 110 Tamb=25°C 100 90 80 70 D=0.5 60 50 40 30 D=0.2 20 10 0 100µ 1m 10m 100m 40 100 Single Pulse Tamb=25°C 100 10 1 100µ 1m 1k 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 2 - JANUARY 2005 3 1k ZXMN2A02X8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 20 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS. STATIC I D =250µA, V GS =0V 1 µA V DS =20V, V GS =0V 100 nA N O T FO R R EC N O EW M M D EN ES D IG ED N V 0.7 Static Drain-Source On-State Resistance R DS(on) (1) 0.02 0.04 V I =250µA, V DS = V GS D Ω Ω V GS =4.5V, V GS =2.5V, V DS =10V,I D =11A g fs 27 S Input Capacitance C iss 1900 pF Output Capacitance C oss 356 pF Reverse Transfer Capacitance C rss 218 pF Turn-On Delay Time t d(on) 7.9 ns Rise Time tr 10 ns Turn-Off Delay Time t d(off) 33.3 ns Fall Time tf 13.6 ns Total Gate Charge Qg 18.6 nC Gate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 4.9 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr Forward Transconductance (1)(3) V GS =⫾12V, V DS =0V I D =11A I D =8.4A DYNAMIC (3) V DS =10 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =10V, I D =1A R G =6.0Ω, V GS =4.5V V DS =10V,V GS =4.5V, I D =11A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =11.5A, V GS =0V 16.3 ns T J =25°C, I F =2.1A, di/dt= 100A/µs 7.8 nC NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JANUARY 2005 4 ZXMN2A02X8 TYPICAL CHARACTERISTICS T = 150°C 7V 7V 10 ID Drain Current (A) 2.5V 2.5V 2V 10 2V N O T FO R R EC N O EW M M D EN ES D IG ED N ID Drain Current (A) T = 25°C VGS 1 1.5V 0.1 1.5V 1 VGS 1V 0.1 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 Normalised RDS(on) and VGS(th) ID Drain Current (A) 10 T = 150°C T = 25°C 1 VDS = 10V 0.1 1 VGS = 4.5V ID = 11A 1.4 RDS(on) 1.2 1.0 0.8 VGS(th) 0.6 VGS = VDS ID = 250uA 0.4 0.2 -50 2 VGS Gate-Source Voltage (V) 1.5V T = 25°C VGS 1 2V 0.1 2.5V 4V 7V 0.01 1 50 100 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics 10 0 Tj Junction Temperature (°C) 10 T = 150°C 10 T = 25°C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ID Drain Current (A) On-Resistance v Drain Current ISSUE 2 - JANUARY 2005 5 ZXMN2A02X8 TYPICAL CHARACTERISTICS 2500 VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 2000 4.5 4.0 ID = 11A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 N O T FO R R EC N O EW M M D EN ES D IG ED N C Capacitance (pF) 3000 1500 CISS COSS 1000 CRSS 500 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VDS = 10V 10 15 20 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 2 - JANUARY 2005 6 ZXMN2A02X8 PAD LAYOUT N O T FO R R EC N O EW M M D EN ES D IG ED N PACKAGE OUTLINE PACKAGE DIMENSIONS DIM Millimetres Inches DIM Millimetres MIN MIN MAX MIN MAX A ᎏ 1.10 ᎏ 0.043 A1 0.05 0.15 0.002 0.006 E B 0.25 0.40 0.010 0.016 H C 0.13 0.23 0.005 0.009 L 0.40 0.70 0.016 0.028 D 2.90 3.10 0.114 0.122 ⍜° 0° 6° 0° 6° e MAX Inches 0.65 BSC 2.90 3.10 4.90 BSC MIN MAX 0.0256 BSC 0.114 0.122 0.193 BSC © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JANUARY 2005 7