ZXMN2B01FTA

ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS(on) (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. Features D • Low on-resistance • Fast switching speed • Low gate drive capability • SOT23 package G S Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control S D Ordering information G Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 ZXMN2B01FTA Top view Device marking 2B1 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMN2B01F Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 20 V Gate-source voltage VGS ±8 V ID 2.4 A @ VGS= 4.5V; Tamb=70°C(b) 1.9 A @ VGS= 4.5V; Tamb=25°C(a) 2.1 A IDM 11.8 A IS 1.4 A Pulsed source current (body diode)(c) ISM 11.8 A Power dissipation at Tamb =25°C(a) PD 625 mW 5 mW/°C 806 mW 6.4 mW/°C Tj, Tstg -55 to +150 °C Continuous drain current @ VGS= 4.5V; Tamb=25°C(b) Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) R⍜JA 200 °C/W Junction to ambient(b) R⍜JA 155 °C/W Junction to NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXMN2B01F Thermal characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXMN2B01F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS 20 Typ. Max. Unit Conditions Static Drain-source breakdown voltage V ID= 250␮A, VGS=0V 1 ␮A VDS= 20V, VGS=0V 100 nA VGS=±8V, VDS=0V 1.0 V ID= 250␮A, VDS=VGS 0.100 ⍀ VGS= 4.5V, ID= 2.4A 0.150 ⍀ VGS= 2.5V, ID= 2.0A 0.200 ⍀ VGS= 1.8V, ID= 1.7A 6.1 S VDS= 10V, ID= 2.4A VDS= 10V, VGS=0V f=1MHz Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) 0.4 Forward transconductance(*)(‡) gfs Dynamic(‡) Input capacitance Ciss 370 pF Output capacitance Coss 81 pF Reverse transfer capacitance Crss 46 pF Turn-on-delay time td(on) 2.2 ns Rise time tr 3.6 ns Turn-off delay time td(off) 17.8 ns Fall time tf 10.5 ns Total gate charge Qg 4.8 nC Gate-source charge Qgs 0.6 nC Gate drain charge Qgd 1.0 nC Diode forward voltage(*) VSD 0.73 Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr Switching (†) (‡) VDD= 10V, VGS= 4.5V ID= 1A RG ≈ 6.0⍀ VDS= 10V, VGS= 4.5V ID= 2.4A Source-drain diode 0.95 V Tj=25°C, IS= 1.2A, VGS=0V 6.7 ns 1.3 nC Tj=25°C, IF= 1.1A, di/dt=100A/ms NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXMN2B01F Typical characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXMN2B01F Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 2 - March 2007 © Zetex Semiconductors plc 2007 Switching time test circuit 6 www.zetex.com ZXMN2B01F Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 C 0.085 0.120 0.003 0.008 L 0.25 0.62 0.018 0.024 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.0375 NOM Max. Inches 1.90 NOM Max. Max. 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - March 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXMN2B01F Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com © 2007 Published by Zetex Semiconductors plc Issue 2 - March 2007 © Zetex Semiconductors plc 2007 8 www.zetex.com