ZXMN3A01ZTA

A Product Line of Diodes Incorporated ZXMN3A01Z ADVANCE INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V(BR)DSS Features and Benefits RDS(on) Max ID max TA = 25°C (Note 5) 120mΩ @ VGS = 10V 3.3A 180mΩ @ VGS = 4.5V 2.7A • • • • • • • 30V Mechanical Data Description and Applications • • This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management functions • Motor control Low On-Resistance Low Threshold Fast Switching Speed Low Gate Drive Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.052 grams (approximate) SOT89 D G S Device symbol Top View Pin-out Top Ordering Information (Note 3) Product ZXMN3A01ZTA Notes: Marking 1S8 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 1S8 ZXMN3A01Z Document number DS35722 Rev. 1 - 2 1S8 = Product type Marking Code 1 of 6 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3A01Z Maximum Ratings @TA = 25°C unless otherwise specified Steady State Continuous Drain Current @ VGS = 10V ; TA = 25°C (Note 5) @ VGS = 10V ; TA = 75°C (Note 5) @ VGS = 10V ; TA = 75°C (Note 4) Pulsed Drain Current (Note 6) Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) (Note 6) Symbol VDSS VGSS Value 30 ±20 Unit V V ID 3.3 2.7 2.2 A IDM IS ISM 20 3.3 20 A A A Symbol Value 0.97 2.12 129 59 -55 to +150 Unit W W °C/W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) Power Dissipation (Note 5) (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Notes: PD RθJA TJ, TSTG 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm FR-4 substrate PC board with 2oz copper 6. Single pulse rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. 100 1,000 Single Pulse RθJA = 57°C/W RθJA(t) = r(t) * RθJA T J - T A = P * RθJA(t) ID, DRAIN CURRENT (A) P(PK), PEAK TRANSIENT POIWER (W) 100 10 PW = 10µs RDS(on) Limited 10 DC 1 PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C PW = 100µs T = 25°C A 1 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation VGS = 10V Single Pulse 2 DUT on 1in. Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 57°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.00001 ZXMN3A01Z Document number DS35722 Rev. 1 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 2 of 6 www.diodes.com 10 100 1,000 February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.5 100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1 RDS (ON) - Forward Transconductance (Note 7 & 9) Diodes Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance (Note 8 & 9) Output Capacitance (Note 8 & 9) Reverse Transfer Capacitance (Note 8 & 9) Gate Charge (Note 8 & 9) Total Gate Charge (Note 8 & 9) Gate-Source Charge (Note 8 & 9) Gate-Drain Charge (Note 8 & 9) Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) Turn-On Delay Time (Note 8 & 9) Turn-On Rise Time (Note 8 & 9) Turn-Off Delay Time (Note 8 & 9) Turn-Off Fall Time (Note 8 & 9) gFS VSD - 120 180 0.95 V Static Drain-Source On-Resistance (Note 7) 0.106 3.5 0.85 VDS = VGS, ID = 250μA VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2A VDS = 4.5V, ID = 2.5A TJ = 25°C, IS = 1.7A, VGS = 0V Ciss Coss Crss Qg Qg Qgs Qgd trr Qrr tD(on) tr tD(off) tf - 186 48 29 2.6 5.0 0.8 1.2 17.7 13.0 2.6 4.1 13.5 3.6 - - - mΩ S V pF pF pF nC nC nC nC ns nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 15V, ID = 2.5A VGS = 10V, VDS = 15V, ID = 2.5A TJ = 25°C, IS = 2.5A, di/dt = 100A/μs VGS = 10V, VDD = 15V, RG = 6Ω , ID = 2.5A 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. 8. Switching characteristics are independent of operating junction temperature. 9. For design aid only, not subject to production testing. 10 10 9 9 8 8 ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT (A) ADVANCE INFORMATION ZXMN3A01Z 7 6 5 4 3 7 6 5 4 3 2 2 1 1 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic, TA = 25°C ZXMN3A01Z Document number DS35722 Rev. 1 - 2 3 of 6 www.diodes.com 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Output Characteristic, TA = 150°C February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN3A01Z T A = 150°C T A = 85°C TA = 25°C TA = -55°C 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Typical Transfer Characteristics 1 VGS = 2.5V VGS = 3.5V 0.01 0.01 6 VGS = 4.0V VGS = 5.0V VGS = 10V 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Gate Voltage 10 10 1.4 1.2 1.0 VGS = VDS ID = 250µA 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature 1 TA = 150°C T A = 25°C 0.1 0.01 1,000 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1.4 VGS GATE THRESHOLD VOLTAGE (V) 10 Ciss 100 C oss Crss f = 1MHz 10 VGS = 3.0V 0.1 IS, SOURCE CURRENT (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.1 0 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 1 TA = 125°C CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance ZXMN3A01Z Document number DS35722 Rev. 1 - 2 30 4 of 6 www.diodes.com VDS = 15V ID = 2.5A 8 6 4 2 0 0 1 2 3 4 5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge 6 February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN3A01Z Package Outline Dimensions R0 D1 .2 00 C E SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm H L B e B1 e1 8° (4 X ) A D Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) ZXMN3A01Z Document number DS35722 Rev. 1 - 2 5 of 6 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN3A01Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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