ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
Product Summary
Features
BVDSS
RDS(ON)
30V
0.025Ω@VGS = 4.5V
ID
TA = +25°C
8.9A
Description
This new generation of Trench MOSFETs from Diodes Incorporated
utilizes a unique structure that combines the benefits of low onresistance with fast switching speed. This makes them ideal for high
efficiency, low voltage, power management applications.
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SO-8 Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound,
Applications
UL Flammability Classification Rating 94V-0
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
SO-8
Top View
Pin Out Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
SO-8
SO-8
ZXMN3B04N8TA
ZXMN3B04N8TC
Notes:
Reel Size
Tape Width
Quantity Per Reel
7”
13”
12mm
12mm
500 Units
2500 Units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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