ZXRE125FRSTOA

ZXRE125 SOT23 MICROPOWER 1.22V VOLTAGE REFERENCE SUMMARY DESCRIPTION The ZXRE125 is a bandgap circuit designed to achieve a precision micropower voltage reference of 1.22 volts. The device is available in the small outline SOT23 surface mount package which is ideal for applications where space saving is important. SOT23 SOT23 tolerance is available to 0.5% for precision applications. Excellent performance is maintained over the 8␮A to 20mA operating current range with a typical temperature coefficient of only 20ppm/°C. The device has been designed to be highly tolerant of capacitive loads so maintaining excellent stability. This device offers a SOT23 pin for pin compatible replacement of the ZRA124 and ZRA125 series of voltage references. An E-Line (TO92 style) package is also available. FEATURES • • • • • • High performance 1.220V reference E-line 0.5%, 1%, 2% and 3% tolerance 4␮A knee current 20ppm/°C typical temperature coefficient SOT23 E-line Package Suffix - F Package Suffix - R Top view - Bottom view - Pin 1 floating or connected to pin 2 Pin 3 floating or connected to pin 1 Unconditionally stable Small outline SOT23 APPLICATIONS • • • • Battery powered equipment Precision power supplies Portable instrumentation Portable communications devices • Data acquisition systems ORDERING INFORMATION DEVICE TOL% GRADE PACKAGE PARTMARKING REEL QUANTITY PER REEL ZXRE125CFTA 0.5 C SOT23 12J 7” 3,000 ZXRE125DFTA 1 D SOT23 12H 7” 3,000 ZXRE125EFTA 2 E SOT23 12G 7” 3,000 ZXRE125FFTA 3 F SOT23 12F 7” 3,000 ZXRE125DRSTOA 1 E-line ZXRE125D - 2,000 ZXRE125ERSTOA 2 E-line ZXRE125E - 2,000 ZXRE125FRSTOA 3 E-line ZXRE125F - 2,000 NOTE: E-line parts available loose in boxes of 2,000 units, omit “STOA” from order code i.e. ZXRE125DR ISSUE 7 - OCTOBER 2003 1 SEMICONDUCTORS ZXRE125 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Reverse current VZ Forward current LIMIT UNIT 30 mA 10 mA Operating temperature T OMP -40 to 85 °C Storage temperature T STG -55 to 125 °C POWER DISSIPATION (at Tamb = 25°C, Tjmax = 25°C) PACKAGE VALUE UNIT SOT23 330 mW E-line 500 mW ISSUE 7 - OCTOBER 2003 SEMICONDUCTORS 2 ZXRE125 SCHEMATIC DIAGRAM APPLICATIONS CIRCUIT ISSUE 7 - OCTOBER 2003 3 SEMICONDUCTORS ZXRE125 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL CONDITIONS Reverse Breakdown Voltage V R I R = 100␮A Minimum Knee Current I MIN Recommended Operating Current Range IR Average Reverse Breakdown Voltage Temperature Coefficient T C (2) MIN. TYP. MAX. 1.214 1.220 1.226 C/0.5(1) V 1.208 1.220 1.232 D/1 V 1.196 1.220 1.244 E/2 V 1.183 1.220 1.257 F/3 V 4 8 ␮A 20 mA 75 ppm/°C mV 0.008 I R(min) to I R(max) 20 GRADE/ UNITS TOL% Reverse Breakdown Change ∆VR with Current Voltage ∆I R I R = 30␮A to 1 mA 1 I R = 1mA to 5mA 10 mV Reverse Dynamic Impedance I R = 1mA 0.6 ⍀ Wideband Noise Voltage ZR 0.2 f = 100Hz EN I AC = 0.1I R IR = 8␮A to 100␮A ␮V(rms) 60 f = 10Hz to 10kHz NOTE: (1) 0.5% SOT23 only (V − VR (min) ) x1000000 (2) T C = R (max) VR x(T (max) − T (min) ) VR(max) - VR(min) is the maximum deviation in reference voltage measured over the full operating temperature range REVERSE CHARACTERISTICS ISSUE 7 - OCTOBER 2003 SEMICONDUCTORS 4 ZXRE125 TYPICAL CHARACTERISTICS ISSUE 7 - OCTOBER 2003 5 SEMICONDUCTORS ZXRE125 SOT23 PACKAGE OUTLINE AND PAD LAYOUT DETAILS PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres Inches DIM Millimetres Inches DIM Min Max Min Max Min A 2.67 3.05 0.105 0.120 G B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004 2.10 2.50 0.083 0.0985 C – 1.10 – 0.043 L D 0.37 0.53 0.0145 0.021 N F 0.085 0.15 0.0033 0.0059 Max NOM 1.9 NOM 0.95 Min Max NOM 0.037 NOM 0.037 ISSUE 7 - OCTOBER 2003 SEMICONDUCTORS 6 ZXRE125 E-LINE PACKAGE OUTLINE PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 0.41 0.495 0.016 0.0195 B 0.41 0.495 0.016 0.0195 C 3.61 4.01 0.142 0.158 D 4.37 4.77 0.172 0.188 E 2.16 2.41 0.085 0.095 F — 2.50 — 0.098 G L 1.27 NOM 13.00 0.050 NOM 13.97 0.512 0.550 © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 7 - OCTOBER 2003 7 SEMICONDUCTORS