ZXTAM322TA

OBSOLETE - PLEASE USE ZXTN617MA ZXTAM322 MPPS™ Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR SUMMARY VCEO= 15V; RSAT = 45m ; IC= 4.5A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels 2mm x 2mm MLP (single die) Lower package height (nom. 0.9mm) PCB area and device placement savings Reduced component count FEATURES • Low Equivalent On Resistance • Extremely Low Saturation Voltage (100mVmax @1A) • hFE specified up to 12A • IC= 4.5A Continuous Collector Current • 2mm x 2mm MLP APPLICATIONS • DC - DC Converters (FET Drivers) • Charging Circuits • Power switches PINOUT • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTAM322TA 7’‘ 8mm 3000 units ZXTAM322TC 13’‘ 8mm 10000 units 2mm x 2mm Single MLP underside view DEVICE MARKING SA ISSUE 2 - JUNE 2002 1 OBSOLETE - PLEASE USE ZXTN617MA ZXTAM322 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO LIMIT UNIT 40 V Collector-Emitter Voltage Emitter-Base Voltage V CEO 15 V V EBO 7.5 V Peak Pulse Current (c) I CM 15 A Continuous Collector Current (a) IC 4.5 A Continuous Collector Current (b) IC 5 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (d) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (e) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 83 °C/W Junction to Ambient (b) R θJA 51 °C/W Junction to Ambient (d) R θJA 125 °C/W Junction to Ambient (e) R θJA 42 °C/W NOTES (a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t⭐5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached. (f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and 1mm wide track is Rth=300°C/W giving a power rating of Ptot=420mW. ISSUE 2 - JUNE 2002 2 OBSOLETE - PLEASE USE ZXTN617MA ZXTAM322 TYPICAL CHARACTERISTICS 10 1 DC Max Power Dissipation (W) IC Collector Current (A) 3.5 VCE(SAT) Limited 1s 100ms 10ms 0.1 1ms 100us 0.01 0.1 Single Pulse, Tamb=25°C 1 10 Tamb=25°C 3.0 2.5 2oz Cu Note: e 2.0 1.5 1.0 1oz Cu Note: a 0.5 0.0 0 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 60 D=0.5 40 Single Pulse D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 PD Dissipation (W) 125 150 100 1k 225 200 175 150 125 100 75 50 25 0 0.1 1oz copper 2oz copper 1 10 100 Board Cu Area (sqcm) Transient Thermal Impedance Thermal Resistance v Board Area Tamb=25°C Tj max=150°C Continuous 2.5 100 Pulse Width (s) 3.5 3.0 75 Derating Curve 80 D=0.2 50 Temperature (°C) Safe Operating Area 20 25 2oz copper 2.0 1.5 1oz copper 1.0 0.5 0.0 0.1 1 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ISSUE 2 - JUNE 2002 3 OBSOLETE - PLEASE USE ZXTN617MA ZXTAM322 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 40 70 V I C =100␮A Collector-Emitter Breakdown Voltage V (BR)CEO 15 18 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7.5 8.2 V I E =100␮A Collector Cut-Off Current I CBO 25 nA V CB =32V Emitter Cut-Off Current I EBO 25 nA V EB =6V Collector Emitter Cut-Off Current I CES 25 nA V CES =12V Collector-Emitter Saturation Voltage V CE(sat) 8 14 mV I C =0.1A, I B =10mA* 70 100 mV 165 200 mV I C =1A, I B =10mA* I C =3A, I B =50mA* 240 280 mV 200 mV I C =4.5A, I B =50mA* I C =4.5A, I B =100mA* Base-Emitter Saturation Voltage V BE(sat) 0.94 1.0 V I C =4.5A, I B =50mA* Base-Emitter Turn-On Voltage V BE(on) 0.88 0.95 V Static Forward Current Transfer Ratio h FE 200 300 200 150 415 450 320 240 80 I C =4.5A, V CE =2V* I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* I C =12A, V CE =2V* Transition Frequency fT 80 120 MHz I C =50mA, V CE =10V f=100MHz Output Capacitance C obo 30 pF V CB =10V, f=1MHz Turn-On Time t (on) 120 ns Turn-Off Time t (off) 160 ns V CC =10V, I C =1A I B1 =I B2 =10mA 40 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 2 - JUNE 2002 4 OBSOLETE - PLEASE USE ZXTN617MA ZXTAM322 TYPICAL CHARACTERISTICS 1 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 0.15 100°C 0.10 25°C -55°C 0.05 IC/IB=10 1m 1m 10m 100m 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC 10m 100m 1 10 1 10 IC Collector Current (A) VCE(SAT) v IC 630 25°C 0.8 360 270 0.6 -55°C 0.4 180 90 0.2 10m 100m 1 10 0 hFE v IC VBE(ON) (V) 0.8 -55°C 0.6 25°C 0.2 1m 100°C 10m 100m 1 IC Collector Current (A) -55°C 25°C 0.6 100°C 0.4 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V 0.4 0.8 1m IC Collector Current (A) 1.0 IC/IB=50 450 1.0 0.0 1m 1.0 540 100°C VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 10 VBE(ON) v IC ISSUE 2 - JUNE 2002 5 OBSOLETE - PLEASE USE ZXTN617MA ZXTAM322 MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MAX. MIN. MAX. A 0.80 1.00 0.0315 0.0393 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.79 0.99 0.031 0.039 A3 0.15 0.25 0.0059 0.0098 E4 0.48 0.68 0.0188 0.0267 b 0.18 0.28 0.0070 0.0110 L 0.20 0.45 0.0078 0.0177 b1 0.17 0.30 0.0066 0.0118 L2 0.125 MAX. 0.005 REF r 0.075 BSC 0.0029 BSC D 2.00 BSC e 0.0787 BSC D2 1.22 1.42 0.0480 0.0559 D4 0.56 0.76 0.0220 0.0299 MIN. ⍜ MAX. INCHES MIN. 0.65 REF 2.00 BSC 0⬚ 12⬚ MIN. MAX. 0.0255 REF 0.0787 BSC 0⬚ 12⬚ © Zetex plc 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2002 6