ZXTCM322TA

OBSOLETE - PLEASE USE ZXTN619MA ZXTCM322 MPPS™ Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR SUMMARY VCEO= 50V; RSAT = 68m ; IC= 4A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also gain several other key benefits: Performance capability equivalent to much larger packages 2mm x 2mm MLP (single die) Improved circuit efficiency & power levels Lower package height (nom 0.9mm) PCB area and device placement savings Reduced component count FEATURES • Low Equivalent On Resistance • Extremely Low Saturation Voltage (100mV max @1A) • hFE specified up to 6A • IC= 4A Continuous Collector Current • 2mm x 2mm MLP APPLICATIONS • DC - DC Converters • Charging Circuits • Power switches PINOUT • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTCM322TA 7 ⴕⴕ 8mm 3000 ZXTCM322TC 13ⴕ ⴕ 8mm 10000 DEVICE MARKING 2mm x 2mm Single MLP underside view SC ISSUE 2 - JUNE 2002 1 OBSOLETE - PLEASE USE ZXTN619MA ZXTCM322 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO LIMIT UNIT 100 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current (c) I CM 6 A Continuous Collector Current (a) IC 4 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (d) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (e) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 83 °C/W Junction to Ambient (b) R θJA 51 °C/W Junction to Ambient (d) R θJA 125 °C/W Junction to Ambient (e) R θJA 42 °C/W NOTES (a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t⭐5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached. (f) The minimum copper dimensions requires for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and 1mm wide wide tracks is Rth=300⬚C giving a power rating of Ptot=420mW. ISSUE 2 - JUNE 2002 2 OBSOLETE - PLEASE USE ZXTN619MA ZXTCM322 TYPICAL CHARACTERISTICS VCE(SAT) Limited 1 DC 1s 100ms 10ms 0.1 1ms 100us 0.01 0.1 Single Pulse, Tamb=25°C 1 10 100 Max Power Dissipation (W) IC Collector Current (A) 3.5 10 Tamb=25°C 3.0 2.5 2oz Cu 2.0 Note: e 1.5 1.0 1oz Cu Note: a 0.5 0.0 0 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 60 D=0.5 40 Single Pulse D=0.05 0 100µ 1m D=0.1 10m 100m 1 10 100 1k Pulse Width (s) PD Dissipation (W) 2.5 2oz copper 2.0 1.5 1oz copper 1.0 0.5 0.0 0.1 1 125 150 10 225 200 175 150 125 100 75 50 25 0 0.1 1oz copper 2oz copper 1 10 100 Thermal Resistance v Board Area 3.5 Tamb=25°C Tj max=150°C Continuous 100 Board Cu Area (sqcm) Transient Thermal Impedance 3.0 75 Derating Curve 80 D=0.2 50 Temperature (°C) Safe Operating Area 20 25 100 Board Cu Area (sqcm) Power Dissipation v Board Area ISSUE 2 - JUNE 2002 3 OBSOLETE - PLEASE USE ZXTN619MA ZXTCM322 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 100 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO Emitter Cut-Off Current MAX. UNIT CONDITIONS. 190 V I C =100␮A 50 65 V I C =10mA* 7.5 8.2 V I E =100␮A 25 nA V CB =80V I EBO 25 nA V EB =6V Collector Emitter Cut-Off Current I CES 25 nA V CES =40V Collector-Emitter Saturation Voltage V CE(sat) 10 70 145 115 225 270 20 100 200 220 300 320 mV mV mV mV mV mV I C =0.1A, I B =10mA* I C =1A, I B =50mA* I C =1A, I B =10mA* I C =2A, I B =50mA* I C =3A, I B =100mA* I C =4A, I B =200mA* Base-Emitter Saturation Voltage V BE(sat) 1.00 1.05 V I C =4A, I B =200mA* Base-Emitter Turn-On Voltage V BE(on) 0.94 1.00 V I C =4A, V CE =2V* Static Forward Current Transfer Ratio h FE 200 300 200 100 400 450 400 225 40 Transition Frequency fT 100 165 Output Capacitance C obo 12 Turn-On Time t (on) Turn-Off Time t (off) I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =1A, V CE =2V* I C =2A, V CE =2V* I C =6A, V CE =2V* MHz I C =50mA, V CE =10V f=100MHz pF V CB =10V, f=1MHz 170 ns 750 ns V CC =10V, I C =1A I B1 =I B2 =10mA 20 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 2 - JUNE 2002 4 OBSOLETE - PLEASE USE ZXTN619MA ZXTCM322 TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 0.20 10m IC/IB=100 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=50 10m 100m 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC 100°C 360 270 0.6 -55°C 0.4 180 90 0.2 0.0 1m 10m 100m 0 10 1 hFE v IC VCE=2V VBE(ON) (V) 0.8 -55°C 0.6 25°C 100°C 10m 100m 1 IC Collector Current (A) 0.6 1 10 25°C 100°C 0.4 10m 100m IC Collector Current (A) VBE(SAT) v IC 1.0 1m 10 -55°C 1m IC Collector Current (A) 0.4 1 0.8 VBE(SAT) (V) 25°C 100m IC/IB=50 540 450 1.0 10m IC Collector Current (A) 1.0 Typical Gain (hFE) Normalised Gain VCE=2V 0.8 -55°C VCE(SAT) v IC 630 1.2 25°C 0.10 0.05 IC/IB=10 1m 1m 100°C 0.15 10 VBE(ON) v IC ISSUE 2 - JUNE 2002 5 OBSOLETE - PLEASE USE ZXTN619MA ZXTCM322 MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MAX. MIN. MAX. A 0.80 1.00 0.0315 0.0393 e 0.65 REF 0.0255 REF A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC A2 0.65 0.75 0.0255 0.0295 E2 0.79 0.99 0.031 0.039 A3 0.15 0.25 0.0059 0.0098 E4 0.48 0.68 0.0188 0.0267 b 0.18 0.28 0.0070 0.0110 L 0.20 0.45 0.0078 0.0177 b1 0.17 0.30 0.0066 0.0118 L2 0.125 MAX. 0.005 REF r 0.075 BSC 0.0029 BSC D 2.00 BSC 0.0787 BSC D2 1.22 1.42 0.0480 0.0559 D4 0.56 0.76 0.0220 0.0299 ⍜ MIN. MAX. INCHES MIN. 0⬚ 12⬚ MIN. 0⬚ MAX. 12⬚ © Zetex plc 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2002 6