ZXTD4591AM832TA

OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS™ Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP (Micro Leaded Package), these high performance NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: • • • • • E2 E1 Low Saturation Voltage (500mV max @1A) HFE specified up to 2A IC = 2.5A Continuous Collector Current 3mm x 2mm MLP Applications • • • • B2 B1 Features • • • • C2 C1 Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count C2 C2 C1 C1 DC - DC Converters Power switches Motor control LED Backlighting circuits 5 7 PNP 4 Ordering information Device 6 8 NPN 3 2 1 E2 B2 E1 B1 Reel size (inches) Tape width (mm) Quantity per reel ZXTD4591AM832TA 7 8 3,000 ZXTD4591AM832TC 13 8 10,000 Bottom view Device marking 91A Issue 2 - April 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 Absolute maximum ratings Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Peak pulse current Symbol VCBO VCEO VEBO ICM IC IC IB PD Continuous collector current(a)(f) Continuous collector current(b)(f) Base current =25°C(a)(f) Power dissipation at TA Linear derating factor Power dissipation at TA =25°C(b)(f) Linear derating factor Power dissipation at TA =25°C(c)(f) Linear derating factor Power dissipation at TA =25°C(d)(f) Linear derating factor Power dissipation at TA =25°C(d)(g) Linear derating factor Power dissipation at TA =25°C(e)(g) Linear derating factor Storage temperature range Junction temperature range Tstg Tj 300 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 150 Unit V V V A A A mA W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C °C Symbol RθJA RθJA RθJA RθJA RθJA RθJA Value 83.3 51 125 111 73.5 41.7 Unit °C/W °C/W °C/W °C/W °C/W °C/W PD PD PD PD PD NPN 40 40 5 3 2 2.5 PNP -40 -40 -5 -3 -1.5 -2.0 Thermal resistance Parameter Junction to ambient(a)(f) Junction to ambient(b)(f) Junction to ambient(c)(f) Junction to ambient(d)(f) Junction to ambient(d)(g) Junction to ambient(e)(g) NOTES: (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t