ZXTDE4M832TA

OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS™ Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) C1 C2 Reduced component count FEATURES B1 B2 • Low Equivalent On Resistance • Extremely Low Saturation Voltage (-185mV max @ 1A--NPN) • HFE specified up to -5A E2 E1 • IC = -3.5A Continuous Collector Current • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters PINOUT • Charging circuits • Power switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTDE4M832TA 7 ⴕⴕ 8mm 3000 ZXTDE4M832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING DE4 ISSUE 1 - JUNE 2002 1 OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 100 -70 V Collector-Emitter Voltage V CEO 80 -70 V Emitter-Base Voltage V EBO 7.5 -7.5 V Peak Pulse Current I CM 5 -3 A Continuous Collector Current (a)(f) IC 3.5 -2.5 A Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Storage Temperature Range T stg Junction Temperature Tj -55 to +150 °C 150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) R θJA VALUE 83.3 UNIT °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t