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ZXTN25100DFHTA

ZXTN25100DFHTA

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT-23

  • 描述:

    100V、SOT23、NPN中功率晶体管 VCEO=100V VEBO=7V IC=2.5A

  • 数据手册
  • 价格&库存
ZXTN25100DFHTA 数据手册
ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High gain • Low saturation voltage • 180V forward blocking voltage • 6V reverse blocking voltage E E Application • Motor control • DC fans • DC-DC converters • Lamp, relay, and solenoid driving C B Pinout - top view Ordering information Device ZXTN25100DFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 Device marking 1B5 Issue 3 - March 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTN25100DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 180 V Collector-emitter voltage (forward blocking) VCEX 180 V Collector-emitter voltage VCEO 100 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 2.5 A Base current IB 0.5 A Peak pulse current ICM 3 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C PD 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C PD 1.81 W 14.5 mW/°C Tj, Tstg - 55 to 150 °C Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Power dissipation at Tamb PD =25°C(c) Linear derating factor Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) R⍜JA 171 °C/W Junction to ambient(b) R⍜JA 119 °C/W Junction to ambient(c) R⍜JA 100 °C/W Junction to ambient(d) R⍜JA 69 °C/W Junction to NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 6 8.7 V IE = 100␮A, Collector-base cut-off current ICBO Max. Unit Conditions
ZXTN25100DFHTA 价格&库存

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ZXTN25100DFHTA
  •  国内价格
  • 1+1.83194
  • 10+1.68054
  • 30+1.65026
  • 100+1.55942

库存:43