ZXTN5551FLTA

ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating • SOT23 package B E Applications • E High voltage amplification C Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 ZXTN5551FLTA B Pinout - top view Device marking N51 Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN5551FL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Continuous collector current(a) IC 600 mA Power dissipation at Tamb =25°C(a) PD 330 mW 2.64 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit R⍜JA 379 °C/W Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTN5551FL Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 180 270 Collector-emitter breakdown voltage (base open) BVCEO 160 Emitter-base breakdown voltage BVEBO 6 Collector cut-off current ICBO Base-emitter saturation voltage VBE(sat) Static forward current transfer ratio hFE Transition frequency fT Output capacitance COBO Small signal hFE 200 7.85