ZXTN5551ZTA

NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating • SOT89 package B E Applications • E High voltage amplification Ordering information Device ZXTN5551ZTA C C Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 B Pinout - top view Device marking N51 Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Continuous collector current(a) IC 600 mA Power dissipation at TA =25°C(a) PD 1.2 W 9.6 mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RJA 104 °C/W Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE DXT5551 ZXTN5551Z Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Collector-base breakdown BVCBO voltage 180 Collector-emitter breakdown voltage (base open) BVCEO Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Static forward current transfer ratio hFE Transition frequency fT Output capacitance COBO Small signal hFE Unit Conditions 270 V IC = 100A 160 200 V IC = 1mA (*) 6 7.85 V IE = 10A