ZXTN617MATA

A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 15V IC = 4.5A Continuous Collector Current Low Saturation Voltage (100mV max @ 1A) RSAT = 45 mΩ for a low equivalent On-Resistance hFE specified up to 12A for high current gain hold up Low profile 0.6mm high package for thin applications RθJA efficient, 60% lower than SOT23 2 4mm footprint, 50% smaller than SOT23 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN2020B-3 Case Material: Molded Plastic. “Green” Molding Compound. Terminals: Pre-Plated NiPdAu leadframe. Nominal Package Height: 0.6mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.01 grams (approximate) Applications • • • • • MOSFET Gate Driving DC–DC Converters Charging Circuits Motor Control Power switch DFN2020B-3 C B E Top View Bottom View Device Symbol Bottom View Pin-Out Ordering Information Product ZXTN617MATA Notes: Marking SA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com. Marking Information SA SA = Product Type Marking code Top View ZXTN617MA Document number: DS31888 Rev. 5 - 2 1 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN617MA Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Note 3) (Note 4) IC Base Current IB Value 40 15 7 15 4.5 5 1 Unit Value 1.5 12 2.45 19.6 83 51 16.8 -55 to +150 Unit V A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2 3. For a device surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 4. Same as note (3), except the device is measured at t ≤ 5 sec. 5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead). ZXTN617MA Document number: DS31888 Rev. 5 - 2 2 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN617MA Thermal Characteristics Max Power Dissipation (W) IC Collector Current (A) 2.0 VCE(SAT) 10 Limited DC 1 1s 100ms 10ms 0.1 1ms 100us 0.01 0.1 Single Pulse, T amb=25°C 1 10 10 sqcm Single 1oz Cu Tamb=25°C 1.5 1.0 0.5 0.0 0 VCE Collector-Emitter Voltage (V) 25 50 75 100 125 150 Temperature (°C) Safe Operating Area Derating Curve Thermal Resistance (°C/W) Thermal Resistance (°C/W) 225 10 sqcm Single 1oz Cu 80 60 D=0.5 40 20 Single Pulse D=0.2 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k 200 175 150 125 1oz copper 100 75 50 25 0 0.1 Pulse Width (s) 2oz copper 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area Transient Thermal Impedance PD Dissipation (W) 3.5 3.0 2.5 T amb=25°C 2oz copper T j max=150°C Continuous 2.0 1.5 1oz copper 1.0 0.5 0.0 0.1 1 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ZXTN617MA Document number: DS31888 Rev. 5 - 2 3 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN617MA Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min 40 15 7 - Typ 70 18 8.2 - Max 100 100 100 Unit V V V nA nA nA hFE 200 300 200 150 - 415 450 320 240 80 - - Collector-Emitter Saturation Voltage (Note 6) VCE(sat) - 8 70 165 240 200 14 100 200 310 - mV Base-Emitter Turn-On Voltage (Note 6) Base-Emitter Saturation Voltage (Note 6) Output Capacitance VBE(on) VBE(sat) Cobo - 0.88 0.94 30 0.96 1.05 40 V V pF Transition Frequency fT 80 120 - MHz Turn-On Time Turn-Off Time ton toff - 120 160 - ns ns Static Forward Current Transfer Ratio (Note 6) Notes: Test Condition IC = 100 µA IC = 10 mA IE = 100 µA VCB = 30V VEB = 6V VCES = 12V IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 3A, VCE = 2V IC = 5A, VCE = 2V IC = 12A, VCE = 2V IC =0.1A, IB = 10mA IC = 1A, IB = 10mA IC = 3A, IB = 50mA IC =4.5A, IB = 50mA IC =4.5A, IB = 100mA IC = 4.5A, VCE = 2V IC = 4.5A, IB = 50mA VCB = 10V. f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V, IC = 1A IB1 = IB2 = 10mA 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%. ZXTN617MA Document number: DS31888 Rev. 5 - 2 4 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN617MA Typical Electrical Characteristics 1 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 0.15 100°C 0.10 25°C -55°C 0.05 IC/IB=10 1m 1m 10m 100m 1 0.00 1m 10 IC Collector Current (A) 10m 100m 1 10 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 630 1.0 450 25°C 0.8 360 0.6 270 -55°C 0.4 180 0.2 0.0 1m 90 10m 100m 1 10 1.0 540 100°C 0 VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 0.8 -55°C 25°C 0.6 100°C 0.4 1m 10m 100m 1 10 IC Collector Current (A) IC Collector Current (A) hFE v IC 1.0 IC/IB=50 VBE(SAT) v IC VCE=2V VBE(ON) (V) 0.8 -55°C 0.6 25°C 0.4 0.2 1m 100°C 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXTN617MA Document number: DS31888 Rev. 5 - 2 5 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN617MA Package Outline Dimensions A3 DFN2020B-3 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 ⎯ ⎯ 0.152 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 1.22 1.42 1.32 D4 0.56 0.76 0.66 e 0.65 ⎯ ⎯ E 1.95 2.075 2.00 E2 0.79 0.99 0.89 E4 0.48 0.68 0.58 L 0.25 0.35 0.30 Z ⎯ ⎯ 0.225 All Dimensions in mm A SEATING PLANE A1 D D2 Z L D4 E E2 E4 b e e Suggested Pad Layout X Y1 Y G X1 Y2 C ZXTN617MA Document number: DS31888 Rev. 5 - 2 Dimensions C G X X1 Y Y1 Y2 6 of 7 www.diodes.com Value (in mm) 1.30 0.24 0.35 1.52 1.09 0.47 0.50 January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN617MA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com ZXTN617MA Document number: DS31888 Rev. 5 - 2 7 of 7 www.diodes.com January 2011 © Diodes Incorporated