ZXTNS618MCTA

A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up • • • • • • • Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier Case: DFN3020B-8 Case Material: Molded Plastic, “Green” Molding Component Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.013 grams (approximate) Applications Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • DC – DC Converters Charging circuits Mobile phones Motor control Portable applications C1 DFN3020B-8 K2 K2 B1 NPN Transistor Bottom View C1 K2 A2 E1 Top View K2 A2 Schottky Diode Equivalent Circuit C1 C1 n/c E1 B1 Pin 1 Bottom View Pin-Out n/c = Not Connected internally Ordering Information (Note 3) Product ZXTNS618MCTA Notes: Marking BS1 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com 3. For packaging details, go to our website http://www.diodes.com Marking Information BS1 ZXTNS618MC Document Number DS31933 Rev. 4 - 2 BS1 = Product type marking code Top view, dot denotes pin 1 1 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC NPN - Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 4 and 7) (Notes 5 and 7) Base Current IC IB Limit 40 20 7 12 4.5 5 1 Unit Value 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit V A NPN - Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol (Notes 4 & 7) Power Dissipation Linear Derating Factor (Notes 5 & 7) PD (Notes 6 & 7) (Notes 6 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 4 & 7) (Notes 5 & 7) (Notes 6 & 7) (Notes 6 & 8) (Note 9) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half. 5. Same as note (4), except the device is measured at t