ZXTP2012ASTZ

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES E-line • 3.5 amps continuous current • Up to 15 amps peak current • Very low saturation voltages • Excellent gain up to 10 amps APPLICATIONS • DC - DC converters • MOSFET gate drivers • Power switches • Motor control ORDERING INFORMATION DEVICE ZXTP2012ASTOA ZXTP2012ASTZ QUANTITY PER REEL PINOUT 2,000 units / reel 2,000 units / carton DEVICE MARKING ZXT P20 12 TOP VIEW ISSUE 2 - NOVEMBER 2005 1 SEMICONDUCTORS ZXTP2012A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -100 V Collector-emitter voltage BV CEO -60 V Emitter-base voltage BV EBO -7 V Continuous collector current (a) IC -3.5 A Peak pulse current Practical power dissipation at T A =25°C (a) I CM -15 A PD 1.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 8 mW/°C PD 0.71 W 5.7 mW/°C Operating and storage temperature range T j , T stg -55 to 150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R ⍜JA 125 °C/W Junction to ambient (b) R ⍜JA 175 °C/W NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b) For a device mounted in a socket in still air conditions. Collector lead length 10mm. ISSUE 2 - NOVEMBER 2005 SEMICONDUCTORS 2 ZXTP2012A CHARACTERISTICS ISSUE 2 - NOVEMBER 2005 3 SEMICONDUCTORS ZXTP2012A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -100 -120 Collector-emitter breakdown voltage BV CER -100 -120 V I C =-1␮A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CEO -60 -80 V I C =-10mA* Emitter-base breakdown voltage BV EBO -7 -8.1 V I E =-100␮A Collector cut-off current I CBO Collector cut-off current MAX. UNIT CONDITIONS V ⬍1 ⬍1 I CER Rⱕ1k⍀ I C =-100␮A -20 nA V CB =-80V -0.5 ␮A VCB=-80V, Tamb=100⬚C -20 nA V CB =-80V -0.5 ␮A VCB=-80V, Tamb=100⬚C V EB =-6V Emitter cut-off current I EBO ⬍1 -10 nA Collector-emitter saturation voltage V CE(SAT) -14 -20 mV I C =-0.1A, I B =-10mA* -50 -65 mV IC=-1A, IB=-100mA* -80 -115 mV IC=-2A, IB=-200mA* -145 -210 mV IC=-4A, IB=-400mA* Base-emitter saturation voltage V BE(SAT) -960 -1060 mV I C =-4A, I B =-400mA* Base-emitter turn-on voltage V BE(ON) -850 -960 mV I C =-4A, V CE =-1V* Static forward current transfer ratio h FE 100 250 100 200 65 120 IC=-4A, VCE=-1V* 10 25 IC=-10A, VCE=-1V* 120 I C =-10mA, V CE =-1V* IC=-1A, VCE=-1V* 300 MHz I C =-100mA, VCE =-10V Transition frequency fT Output capacitance C OBO 48 pF Switching times t ON 39 ns t OFF 370 f=50MHz V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA * Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%. ISSUE 2 - NOVEMBER 2005 SEMICONDUCTORS 4 ZXTP2012A TYPICAL CHARACTERISTICS ISSUE 2 - NOVEMBER 2005 5 SEMICONDUCTORS ZXTP2012A PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.41 0.495 0.016 0.0195 B 0.41 0.495 0.016 0.0195 C 3.61 4.01 0.142 0.158 D 4.37 4.77 0.172 0.188 E 2.16 2.41 0.085 0.095 F — 2.50 — 0.098 G 1.27 NOM L 13.00 13.97 0.050 NOM 0.512 0.550 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - NOVEMBER 2005 SEMICONDUCTORS 6