ZXTP5401GTA

ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package B E Applications • E High voltage amplification C Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel ZXTP5401GTA 7 12 1000 ZXTP5401GTC 13 12 4000 C B Pinout - top view Device marking ZXTP 5401 Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP5401G Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Continuous collector current(a) IC -600 mA Peak collector current IC -2 A Power dissipation at TA =25°C(a) PD 2 W 16 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit R⍜JA 62.5 °C/W Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTP5401G Typical characteristics Issue 1 - August 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTP5401G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -160 -270 V IC = -100␮A, Collector-emitter breakdown voltage (base open) BVCEO -150 -240 V IC = -1mA * Emitter-base breakdown voltage BVEBO -5 -8.1 V IE = -10␮A Collector cut-off current ICBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Static forward current transfer hFE ratio Transition frequency fT Output capacitance COBO Delay time t(d) Rise time