A Product Line of
Diodes Incorporated
ZXTP717MA
12V PNP LOW SATURATION SWITCHING TRANSISTOR
Features and Benefits
Mechanical Data
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•
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•
•
•
•
•
•
•
•
•
•
•
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BVCEO > -12V
IC = -4A Continuous Collector Current
Low Saturation Voltage (-140mV max @ -1A)
RSAT = 60 mΩ for a low equivalent On-Resistance
hFE specified up to -10A for a high current gain hold up
Low profile 0.6mm high package for thin applications
RθJA efficient, 60% lower than SOT23
2
4mm footprint, 50% smaller than SOT23
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN2020B-3
Case Material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal Package Height: 0.6mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
Applications
•
•
•
•
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MOSFET Gate Driving
DC-DC Converters
Charging Circuits
Power switches
Motor Control
DFN2020B-3
C
B
E
Top View
Bottom View
Bottom View
Pin-Out
Device Symbol
Ordering Information (Note 3)
Product
ZXTP717MATA
Notes:
Marking
S1
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
S1
S1 = Product Type Marking code
Top View
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
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January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP717MA
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
ICM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
(Note 4)
(Note 5)
IC
Base Current
IB
Value
-20
-12
-7
-12
-4
-4.5
-1
Unit
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
V
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Note 4)
PD
(Note 5)
(Note 4)
(Note 5)
(Note 6)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2
4. For a device surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
5. Same as note (4), except the device is measured at t ≤ 5 sec.
6. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
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© Diodes Incorporated
A Product Line of
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ZXTP717MA
Thermal Characteristics
VCE(SAT)
Max Power Dissipation (W)
IC Collector Current (A)
2.0
10
Limited
DC
1
1s
100ms
10ms
0.1
1ms
100us
0.01
0.1
Single Pulse, Tamb=25°C
1
10
10 sqcm
Single
1 oz Cu
T amb=25°C
1.5
1.0
0.5
0.0
0
VCE Collector-Emitter Voltage (V)
25
50
75
100
125
150
Temperature (°C)
Derating Curve
Safe Operating Area
80
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
225
10 sqcm
Single
1 oz Cu
60
D=0.5
40
20
Single Pulse
D=0.2
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
200
175
150
125
1oz copper
100
75
50
25
0
0.1
Pulse Width (s)
2oz copper
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Transient Thermal Impedance
PD Dissipation (W)
3.5
3.0
2.5
T amb=25°C
2oz copper
T j max=150°C
Continuous
2.0
1.5
1oz copper
1.0
0.5
0.0
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTP717MA
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© Diodes Incorporated
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ZXTP717MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Min
-20
-12
-7
-
Typ
-35
-25
-8.5
-
Max
-100
-100
-100
Unit
V
V
V
nA
nA
nA
hFE
300
300
180
60
45
475
450
275
100
70
-
-
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
-
-10
-100
-100
-195
-240
-17
-140
-150
-300
-310
mV
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
-
-0.87
-0.97
21
-0.96
-1.07
30
V
V
pF
Transition Frequency
fT
100
110
-
MHz
Turn-On Time
Turn-Off Time
ton
toff
-
70
130
-
ns
ns
Static Forward Current Transfer Ratio (Note 7)
Notes:
Test Condition
IC = -100 µA
IC = -10 mA
IE = -100 µA
VCB = -16V
VEB = -6V
VCES = -10V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -2.5A, VCE = -2V
IC = -8A, VCE = -2V
IC = -10A, VCE = -2V
IC =- 0.1A, IB = -10mA
IC = -1A, IB = -10mA
IC = -1.5A, IB = -50mA
IC = -3A, IB = -50mA
IC = -4A, IB = -150mA
IC = -4A, VCE = -2V
IC = -4A, IB = -150mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -6V, IC = -2A
IB1 = IB2 = -50mA
7. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
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Typical Electrical Characteristics
0.25
IC/IB=50
Tamb=25°C
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
IC/IB=10
1m
1m
10m
100m
1
25°C
0.10
-55°C
0.05
0.00
1m
10
100°C
0.15
IC Collector Current (A)
10m
450
25°C
360
0.6
270
0.4
180
-55°C
0.2
0.0
1m
90
10m
100m
1
10
0
1.0
VBE(SAT) (V)
540
1.0
0.8
630
Typical Gain (hFE)
Normalised Gain
1.2
VCE=2V
100°C
10
IC/IB=50
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
1.0
1
VCE(SAT) v IC
VCE(SAT) v IC
1.4
100m
IC Collector Current (A)
VBE(SAT) v IC
VCE=2V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
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A Product Line of
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ZXTP717MA
Package Outline Dimensions
A3
A
SEATING PLANE
A1
D
D2
Z
L
D4
E E2
E4
b
e
e
DFN2020B-3
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0
0.05 0.02
A3
⎯
⎯ 0.152
b
0.20 0.30 0.25
D
1.95 2.075 2.00
D2 1.22 1.42 1.32
D4 0.56 0.76 0.66
e
0.65
⎯
⎯
E
1.95 2.075 2.00
E2
0.79 0.99 0.89
E4
0.48 0.68 0.58
L
0.25 0.35 0.30
Z
⎯
⎯ 0.225
All Dimensions in mm
Suggested Pad Layout
X
Y1
Y
G
X1
Y2
C
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
Dimensions
C
G
X
X1
Y
Y1
Y2
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Value (in mm)
1.30
0.24
0.35
1.52
1.09
0.47
0.50
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP717MA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
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© Diodes Incorporated
