ZXTS1000NE6TA

ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package. SOT23-6 FEATURES • Low Saturation Transistor • High Gain - 300 minimum • Low VF, fast switching Schottky APPLICATIONS • Mobile telecomms, PCMCIA & SCSI • DC-DC Conversion ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXTS1000E6TA 7 8mm embossed 3000 units ZXTS1000E6TC 13 8mm embossed 10000 units DEVICE MARKING 1000 Top View ISSUE 1 - NOVEMBER 2000 1 ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO -12 V Collector-Emitter Voltage V CEO -12 V Emitter-Base Voltage V EBO -5 V Continuous Collector Current IC -1.25 A Continuous Reverse Voltage VR 40 V Forward Current IF 0.5 A Non Repetitive Forward Current t≤100µs t≤ 10ms I FSM 6.75 3 A A Power Dissipation at T amb =25°C single die “on” both die “on” PD 0.725 0.885 W W Storage Temperature Range T stg -55 to +150 °C Junction Temperature Tj 125 °C Transistor Collector-Base Voltage Schottky Diode Package THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) single die “on” both die “on” R θJA R θJA VALUE UNIT 138 113 °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ISSUE 1 - NOVEMBER 2000 2 ZXTS1000E6 TRANSISTOR TYPICAL CHARACTERISTICS 0.4 0.4 IC/IB=50 0.3 VCE(sat) - (V) VCE(sat) - (V) +25°C IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.1 0 0.3 -55°C +25°C +100°C +150°C 0.2 0.1 1m 10m 100m 1 0 10 1m 10m IC - Collector Current (A) VCE(sat) v IC VCE=2V 1.0 600 +100°C 0.8 400 +25°C VBE(sat) - (V) hFE - Typical Gain 800 200 0.4 0 10 1m IC - Collector Current (A) 0.8 VBE(on) - (V) 10m 100m 1 10 10 1.0 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 1m -55°C +25°C +100°C +150°C IC - Collector Current (A) VBE(sat) v IC hFE v IC 0 10 0.6 0.2 10m 100m 1 IC - Collector Current (A) 1 IC/IB=50 -55°C 0 1m 100m IC - Collector Current (A) VCE(sat) v IC 10m 100m 1 1 100m 10m 100m 10 IC - Collector Current (A) VBE(on) v IC DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area ISSUE 1 - NOVEMBER 2000 3 100 ZXTS1000E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. TRANSISTOR ELECTRICAL CHARACTERISTICS Collector-Base Breakdown Voltage V (BR)CBO -12 V I C = -100µA Collector-Emitter Breakdown Voltage V (BR)CEO -12 V I C = -10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E = -100µA Collector Cut-Off Current I CBO -10 nA V CB =-10V Emitter Cut-Off Current I EBO -10 nA V EB =-4V Collector Emitter Cut-Off Current I CES -10 nA V Collector-Emitter Saturation Voltage V CE(sat) -25 -55 -110 -160 -185 -40 -100 -175 -215 -240 mV mV mV mV mV IC= IC= IC= IC= IC= Base-Emitter Saturation Voltage V BE(sat) -990 -1100 mV IC= -1.25A, IB= -100mA* Base-Emitter Turn-On Voltage V BE(on) -850 -1000 mV I C = -1.25A, V CE = 2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 220 MHz I C = -50mA, V CE =-10 V f= 100MHz Output Capacitance C obo 15 pF V CB = -10V, f=1MHz Turn-On Time t (on) 50 ns Turn-Off Time t (off) 135 ns V CC = -10V, I C =-1A I B1 =I B2 =-100mA 300 300 200 125 75 30 CES =-10V IC= IC= IC= IC= IC= IC= 490 450 340 250 140 80 -0.1A, I B = -10mA* -0.25A, I B =-10 mA* -0.5A, I B =-10 mA* -1A, I B = -50mA* -1.25A, I B = -100mA* -10mA, V CE =-2V* -0.1A, V CE = -2V* -0.5A, V CE = -2V* -1.25A, V CE =-2V* -2A, V CE = -2V* -3A, V CE = -2V* SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage V (BR)R 40 60 V I R =200µA Forward Voltage VF 270 300 370 425 550 640 810 300 350 460 550 670 780 1050 mV mV mV mV mV mV mV I F =50mA* I F =100mA* I F =250mA* I F =500mA* I F =750mA* I F =1000mA* I F =1500mA* Reverse Current IR 15 40 µA V R =30V Diode Capacitance CD 20 pF f=1MHz,V R =30V Reverse Recovery Time t rr 10 ns switched from IF = 500mA to I R = 500mA Measured at IR = 50mA *Measured under pulsed conditions. ISSUE 1 - NOVEMBER 2000 4 ZXTS1000E6 DIODE TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2000 5 ZXTS1000E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0° 0.037 REF 0.074 REF 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2000 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - NOVEMBER 2000 8