BL13N50-A

BL13N50 Power MOSFET 1．Description BL13N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V DS@Tj.max 500 V ID 13 A R DS(ON).Typ 0.37 Ω Qg. Typ 35 nC FEATURES  Fast Switching  Low Crss (typical 12pF )  100% avalanche tested  Improved dv/dt capability  RoHS product APPLICATIONS  High frequency switching mode power supply  Electronic ballast ORDERING INFORMATION Ordering Codes Package BL13N50-P TO-220 BL13N50-A TO-220F Product Code Packing Tube Tube BL13N50 BL13N50-A XXXX：Product Code (2) Package type (1) Chip name XXXX YYWW ZZ SSSSS (1)BL13N50:500V 13A (2) A:TO-220F P:TO-220 BL13N50 Rev 1.1 4/2019 YYWW：Year&Week ZZ：Assembly Code SSSSS：Lot Code www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET 2．ABSOLUTE RATINGS at TC = 25°C, unless otherwise specified Symbol Parameter V DSS Drain-to-Source Voltage ID I DM V GS E AS dv/dt PD PD Rating Units Peak Diode Recovery dv/dt(Note3) 500 13 8.2 52 ±30 850 5.0 V A A A V mJ V/ns Power Dissipation TO-220 190 W Derating Factor above 25°C 1.53 W/℃ 45 W 0.36 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current Continuous Drain Current T C = 100 °C Pulsed Drain Current(Note1) Gate-to-Source Voltage Single Pulse Avalanche Energy(Note2) Power Dissipation TO-220F Derating Factor above 25°C T J ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering 3．Thermal characteristics Thermal characteristics TO-220 Symbol Parameter RATINGS Units R θJC Junction-to-Case 0.65 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W RATINGS Units Thermal characteristics TO-220F Symbol Parameter R θJC Junction-to-Case 2.78 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET 4．Electrical Characteristics at TC = 25°C, unless otherwise specified OFF Characteristics Values Symbol Parameter Test Conditions Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA 500 -- -- ΔBV DSS /Δ TJ Bvdss Temperature Coefficient ID=250uA, Reference25℃ -- 0.6 -- V/℃ -- -- 10 µA Drain to Source Leakage Current V DS =500V, V GS = 0V, Tj = 25℃ V DS =400V, V GS = 0V, Tj = 125℃ -- -- 100 µA V GS =+30V -- -- 100 nA V GS =-30V -- -- -100 nA I DSS I GSS(F) I GSS(R) Gate to Source Forward Leakage Gate to Source Reverse Leakage Units V ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source OnResistance VGS=10V, ID=6.5A(Note4) V GS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA(Note4) g fs Forward Transconductance VDS=20V, ID =6.5A(Note4) Values Min. -- Typ. Max. 0.37 0.46 Units Ω 2.0 -- 4.0 V -- 12 -- S Dynamic Characteristics Symbol Parameter Test Conditions Rg C iss C oss Gate resistance f = 1.0MHz C rss Reverse Transfer Capacitance BL13N50 Rev 1.1 4/2019 Input Capacitance Output Capacitance VGS = 0V VDS = 25V f = 1.0MHz www.belling.com.cn Values Min. Typ. Max. ---- 1.5 1890 195 ---- -- 12 -- Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved Units Ω PF BL13N50 Power MOSFET Switching Characteristics Symbol Parameter Test Conditions t d(ON) tr t d(OFF) tf Qg Q gs Q gd Turn-on Delay Time ID =13A VDD = 250V VGS = 10V RG =20Ω Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge ID =13A VDD =400V VGS = 10V Values Min. Typ. Max. -------- 32 25 82 31 35 9.3 15 -------- Units ns nC Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS I SM Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) TC=25 °C V SD Diode Forward Voltage T rr Q rr I rrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Values Typ. Max. -- -- 13 A -- -- 52 A IS=13A, VGS=0V(Note4) -- -- 1.2 V IS=13A, Tj = 25°C dIF/dt=100A/us, VGS=0V ---- 505 4091 16.2 ---- ns nC A Note1: Pulse width limited by maximum junction temperature Note2: L=10mH, VDs=50V, Start TJ=25℃ Note3: ISD =13A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ Note4: Pulse width tp≤300µs, δ≤2% BL13N50 Rev 1.1 4/2019 Units Min. www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET 5. Characteristics Curves Figure 1a Safe Operating Area (No FullPAK) Figure 1b Safe Operating Area (FullPAK) Figure 2a Power Dissipation (No FullPAK) Figure 2b Power Dissipation (FullPAK) BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET Figure 3a Max Thermal Impendance (No FullPAK) Figure 3b Max Thermal Impendance (FullPAK) Figure 4 Typical Output Characteristics Figure 5 Typical Transfer Characteristics 36 32 24 Vgs=10V Vgs=7V Vgs=6V Vgs=5V Bottom: Vgs=4.5V Note: 250us Pluse Test Tc = 25℃ Id , Drain Current , Amps Id , Drain Current , Amps TOP: 16 24 12 8 0 0 0 BL13N50 Rev 1.1 4/2019 5 10 15 20 Vds , Drain-to-Source Voltage , Volts 25 2 www.belling.com.cn 4 6 8 Vgs , Gate to Source Voltage , Volts Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 10 BL13N50 Power MOSFET Figure 6 Typical Drain to Source ON Resistance vs Drain Current Figure 7 Typical Drian to Source on Resistance vs Junction Temperature Figure 8 Typical Theshold Voltage vs Junction Temperature Figure 9 Typical Breakdown Voltage vs Junction Temperature BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET Figure 10 Typical Theshold Voltage vs Junction Temperature BL13N50 Rev 1.1 4/2019 Figure 11 Typical Breakdown Voltage vs Junction Temperature www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET 6. Test Circuit and Waveform Figure 12 Gate Charge Test Circuit Figure 13 Gate Charge Waveforms Figure 14 Resistive Switching Test Circuit Figure 15 Resistive Switching Waveforms BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET Figure 16 Diode Reverse Recovery Test Circuit Figure 17 Diode Reverse Recovery Waveform Figure 18 Unclamped Inductive Switching Test Circuit Figure 19 Unclamped Inductive Switching Waveform BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET 7. Package Description C A D B1 B Q ΦP H G L C1 E F N Items N Values(mm) MIN MAX A 9.60 10.4 B B1 C C1 15.4 8.90 4.30 2.10 2.40 16.2 9.50 4.90 3.00 3.00 L 0.60 0.30 1.12 3.40 1.60 12.0 1.00 0.60 1.42 3.80 2.90 14.0 N Q 2.34 3.15 2.74 3.55 2.90 3.30 D E F G H TO-220F Package BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET Items Values(mm) MIN MAX A 9.60 10.6 B B1 C C1 D E F G H L N Q 15.0 8.90 4.30 2.30 1.20 0.70 0.30 1.17 2.70 12.6 2.34 2.40 3.50 16.0 9.50 4.80 3.10 1.40 0.90 0.60 1.37 3.80 14.8 2.74 3.00 3.90 TO-220 BL13N50 Rev 1.1 4/2019 Package www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved BL13N50 Power MOSFET NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: 上海贝岭股份有限公司（总部） 地址：上海市宜山路 810 号 邮编：200233 电话：021-24261000 产品业务咨询及技术支持 电话：021-24261326 传真 2：021-64852222 邮箱 2：marketing@belling.com.cn 上海贝岭深圳分公司（华南区） 地址：深圳市福田中心区民田路新华保险大厦 1510 室 邮编：518031 电话：0755-33336776 0755-33336770 传真：0755-33336788 上海贝岭北京办事处（华北区） 地址：北京市西城区新华里 16 号院锦官苑小区 10 号楼 1 单元 1505 室 邮编：100044 电话：010-64179374 传真：010-8835 9236 BL13N50 Rev 1.1 4/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved