BL18N20

BL18N20 Power MOSFET 1．Description Step-Down Converter BL18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V DS 200 V ID 18 A R DS(ON).Typ 0.13 Ω FEATURES  Fast Switching  Low Crss  100% avalanche tested  Improved dv/dt capability  RoHS product APPLICATIONS  High frequency switching mode power supply ORDERING INFORMATION Ordering Codes Package BL18N20-P TO-220 BL18N20-A TO-220F BL18N20-U TO-251 BL18N20-D TO-252 , Product Code Packing Tube Tube Tube Tape Reel 18N20 BL18N20-A XXXX：Product Code (2) Package type (1) Chip name XXXX YYWW ZZ SSSSS (1)BL18N20:200V 18A (2) A:TO-220F P:TO-220 U:TO-251 D:TO-252 BL18N20 Rev 1.0 12/2019 YYWW：Year&Week ZZ：Assembly Code SSSSS：Lot Code www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET 2．ABSOLUTE RATINGS Step-Down at TC = 25°C, unless otherwise specified Symbol Parameter V DSS Drain-to-Source Voltage ID I DM V GS E AS dv/dt PD PD Converter Rating Units Peak Diode Recovery dv/dt (Note3) 200 18 11 72 ±30 580 5.0 V A A A V mJ V/ns Power Dissipation TO-220, TO-251,TO-252 130 W Derating Factor above 25°C 1.2 W/℃ Power Dissipation TO-220F 42 W 0.33 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current Continuous Drain Current T C = 100 °C Pulsed Drain Current(Note1) Gate-to-Source Voltage Single Pulse Avalanche Energy(Note2) Derating Factor above 25°C T J ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering 3．Thermal characteristics Thermal characteristics (No FullPAK) TO-220\TO-251\TO-252 Symbol Parameter RATINGS Units R θJC Junction-to-Case 0.84 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W RATINGS Units 3.0 ℃/W 62.5 ℃/W Thermal characteristics (FullPAK) TO-220F Symbol Parameter R θJC Junction-to-Case R θJA Junction-to-Ambient BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved , BL18N20 Power MOSFET 4．Electrical Characteristics Step-Down at TC = 25°C, unless otherwise specified Converter , OFF Characteristics Values Symbol Parameter Test Conditions Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA 200 -- -- ΔBV DSS /Δ TJ Bvdss Temperature Coefficient ID=250uA, Reference25℃ -- 0.25 -- V/℃ -- -- 1 µA Drain to Source Leakage Current V DS =200V, V GS = 0V, Tj = 25℃ V DS =160V, V GS = 0V, Tj = 125℃ -- -- 100 µA V GS =+30V -- -- 100 nA V GS =-30V -- -- -100 nA I DSS I GSS(F) I GSS(R) Gate to Source Forward Leakage Gate to Source Reverse Leakage Units V ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source OnResistance VGS=10V, ID=7.5A(Note4) V GS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA(Note4) g fs Forward Transconductance VDS=15V, ID =9A(Note4) Values Min. -- Typ. Max. 0.13 0.18 Units Ω 2.0 -- 4.0 V -- 12 -- S Dynamic Characteristics Symbol Parameter Test Conditions Rg C iss C oss Gate resistance f = 1.0MHz C rss Reverse Transfer Capacitance BL18N20 Rev 1.0 12/2019 Input Capacitance Output Capacitance VGS = 0V VDS = 25V f = 1.0MHz Values Min. Typ. Max. ---- 2 1320 450 ---- -- 130 -- www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved Units Ω PF BL18N20 Power MOSFET Switching Characteristics Step-Down ConverterValues Symbol Parameter Test Conditions t d(ON) Tr t d(OFF) tf Qg Q gs Q gd Turn-on Delay Time ID =18A VDD = 100V VGS = 10V RG =20Ω Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge ID =18A VDD =160V VGS = 10V Min. Typ. Max. -------- 15 52 46 37 23 8 6 -------- Units , ns nC Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS TC=25 °C I SM Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) V SD Diode Forward Voltage T rr Reverse Recovery Time Q rr Reverse Recovery Charge IS=18A, VGS=0V(Note4) IS=18A, Tj = 25°C dIF/dt=100A/us, VGS=0V Values Typ. Max. -- -- 18 A -- -- 72 A -- -- 1.2 V -- 350 -- ns -- 3600 -- nC Note1: Pulse width limited by maximum junction temperature Note2: L=2.7mH, VDs=50V, Start TJ=25℃ Note3: ISD =18A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ Note4: Pulse width tp≤300µs, δ≤2% BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved Units Min. BL18N20 Power MOSFET 5. Characteristics Curves Step-Down Converter Figure 1a Safe Operating Area (No FullPAK) Figure 1b Safe Operating Area (FullPAK) Figure 2a Power Dissipation (No FullPAK) Figure 2b Power Dissipation (FullPAK) BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved , BL18N20 Power MOSFET Step-Down Figure 3a Max Thermal Impendance (No FullPAK) Figure 3bConverter Max Thermal Impendance (FullPAK) , Figure 4 Typical Output Characteristics BL18N20 Rev 1.0 12/2019 Figure 5 Typical Transfer Characteristics www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET Figure 6 Typical Drain to Source ON Resistance vs Drain Current Figure 7 Typical Drian to Source on Resistance vs Junction Temperature Step-Down Converter , Figure 8 Typical Theshold Voltage vs Junction Temperature BL18N20 Rev 1.0 12/2019 Figure 9 Typical Breakdown Voltage vs Junction Temperature www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET Figure 10 Capacitance Characteristics Figure 11 Gate Charge Characteristics Step-Down Converter , BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET 6. Test Circuit and Waveform Step-Down Converter Figure 12 Gate Charge Test Circuit Figure 13 Gate Charge Waveforms Figure 14 Resistive Switching Test Circuit Figure 15 Resistive Switching Waveforms BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved , BL18N20 Power MOSFET Figure 16 Diode Reverse Recovery Test Circuit Figure 17 Diode Reverse Recovery Waveform Step-Down Converter , Figure 18 Unclamped Inductive Switching Test Circuit BL18N20 Rev 1.0 12/2019 Figure 19 Unclamped Inductive Switching Waveform www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET 7. Package Description C Step-Down Converter A D , B1 B Q ΦP H G L C1 E F N Items N Values(mm) MIN MAX A 9.60 10.4 B B1 C C1 15.4 8.90 4.30 2.10 2.40 16.2 9.50 4.90 3.00 3.00 L 0.60 0.30 1.12 3.40 1.60 12.0 1.00 0.60 1.42 3.80 2.90 14.0 N Q 2.34 3.15 2.74 3.55 2.90 3.30 D E F G H TO-220F Package BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET Step-Down Converter , Values(mm) Items MIN MAX A 9.60 10.6 B B1 C C1 D E F G H L N Q 15.0 8.90 4.30 2.30 1.20 0.70 0.30 1.17 2.70 12.6 2.34 2.40 3.50 16.0 9.50 4.80 3.10 1.40 0.90 0.60 1.37 3.80 14.8 2.74 3.00 3.90 TO-220 BL18N20 Rev 1.0 12/2019 Package www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved BL18N20 Power MOSFET Step-Down Converter , Items A B B1 B2 C D E F G H L* M N Values(mm) MIN 6.30 5.70 1.00 6.80 2.10 0.30 0.50 0.30 0.70 1.60 3.9 5.10 2.09 adjustable *： TO-251 Package BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved MAX 6.90 6.30 1.20 7.40 2.50 0.60 0.70 0.60 1.00 2.40 4.3 5.50 2.49 BL18N20 Power MOSFET Step-Down Converter , Items A A1 B C D E1 E2 F G L1 L2 H M N R T Y Values(mm) MIN 6.30 0 5.70 2.10 0.30 0.60 0.70 0.30 0.70 9.60 2.70 0.60 5.10 2.09 MAX 6.90 0.13 6.30 2.50 0.60 0.90 1.00 0.60 1.20 10.50 3.10 1.00 5.50 2.49 0 .3 1.40 5.10 TO-252 Package BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved 1.60 6.30 BL18N20 Power MOSFET NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, Step-Down Converter even the permanent failure, which may affect the dependability of the machine. Please do not , exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: 上海贝岭股份有限公司（总部） 地址：上海市宜山路 810 号 邮编：200233 电话：021-24261000 产品业务咨询及技术支持 电话：021-24261326 传真 2：021-64852222 邮箱 2：marketing@belling.com.cn 上海贝岭深圳分公司（华南区） 地址：深圳市福田中心区民田路新华保险大厦 1510 室 邮编：518031 电话：0755-33336776 0755-33336770 传真：0755-33336788 上海贝岭北京办事处（华北区） 地址：北京市西城区新华里 16 号院锦官苑小区 10 号楼 1 单元 1505 室 邮编：100044 电话：010-64179374 传真：010-8835 9236 BL18N20 Rev 1.0 12/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2011 Belling All Rights Reserved