BL9N50-A

BL9N50 Power MOSFET 1． ．Description BL9N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V DS@Tj.max 550 V ID 9 A R DS(ON).Typ 0.6 Ω FEATURES  Fast Switching  Low Crss  100% avalanche tested  Improved dv/dt capability  RoHS product APPLICATIONS  High frequency switching mode power supply  Electronic ballast ORDERING INFORMATION Ordering Codes Package BL9N50-P TO-220 BL9N50-A TO-220F BL9N50-U TO-251 BL9N50-D TO-252 Product Code BL9N50 BL9N50-A (1) Chip name XXXX YYWW ZZ SSSSS (1) BL9N50:500V 9A (2) A:TO-220F P:TO-220 U:TO-251 D：TO-252 Rev 1.1 5/2019 ：Product Code YYWW ： Year&Week ZZ ： Assembly Code SSSSS ： Lot Code XXXX (2) Package type BL9N50 Packing Tube Tube Tube Tape Reel www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 1 / 15 BL9N50 Power MOSFET 2． ．ABSOLUTE RATINGS at TC = 25°C, unless otherwise specified Symbol Parameter V DSS Drain-to-Source Voltage ID I DM V GS E AS dv/dt PD PD Rating Units Peak Diode Recovery dv/dt(Note3) 500 9 5.67 36 ±30 520 5.0 V A A A V mJ V/ns Power Dissipation TO-220 TO-251 TO-252 160 W Derating Factor above 25°C 1.28 W/℃ 48 W 0.38 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current Continuous Drain Current T C = 100 °C Pulsed Drain Current(Note1) Gate-to-Source Voltage Single Pulse Avalanche Energy(Note2) Power Dissipation TO-220F Derating Factor above 25°C T J ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering 3． ．Thermal characteristics Thermal characteristics TO-220 Symbol Parameter RATINGS Units R θJC Junction-to-Case 0.78 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W RATINGS Units 2.6 ℃/W 62.5 ℃/W Thermal characteristics TO-220F Symbol Parameter R θJC Junction-to-Case R θJA Junction-to-Ambient BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 2 / 15 BL9N50 Power MOSFET 4． ．Electrical Characteristics at TC = 25°C, unless otherwise specified OFF Characteristics Values Symbol Parameter Test Conditions Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA 500 -- -- ΔBV DSS /Δ TJ Bvdss Temperature Coefficient ID=250uA, Reference25 -- 0.6 -- -- -- 1 µA Drain to Source Leakage Current V DS =500V, V GS = 0V, Tj = 25 V DS =400V, V GS = 0V, Tj = 125 ℃ -- -- 10 µA V GS =+30V -- -- 100 nA V GS =-30V -- -- -100 nA I DSS I GSS(F) I GSS(R) ℃ ℃ Gate to Source Forward Leakage Gate to Source Reverse Leakage Units V V/ ℃ ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source OnResistance VGS=10V, ID=4.5A(Note4) V GS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA(Note4) g fs Forward Transconductance VDS=15V, ID =4.5A(Note4) Values Units Min. Typ. Max. -- 0.6 0.72 Ω 2.2 -- 3.8 V -- 10 -- S Dynamic Characteristics Symbol Parameter Test Conditions Rg C iss C oss Gate resistance f = 1.0MHz C rss Reverse Transfer Capacitance BL9N50 Rev 1.1 5/2019 Input Capacitance Output Capacitance VGS = 0V VDS = 25V f = 1.0MHz Values Min. Typ. Max. ---- 2.3 1330 115 ---- -- 3.5 -- Units Ω PF www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 3 / 15 BL9N50 Power MOSFET Switching Characteristics Symbol Parameter Test Conditions t d(ON) tr t d(OFF) tf Qg Q gs Q gd Turn-on Delay Time ID =9A VDD = 250V VGS = 10V RG =10Ω Rise Time Turn-Off Delay Time Fall Time Total Gate Charge ID =9A VDD =400V VGS = 10V Gate to Source Charge Gate to Drain (“Miller”)Charge Values Min. Typ. Max. -------- 33 31 81 38 25 8 7 -------- Units ns nC Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS TC=25 °C I SM Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) V SD Diode Forward Voltage T rr Q rr I rrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Values Units Min. Typ. Max. -- -- 9 A -- -- 36 A IS=9A, VGS=0V(Note4) -- -- 1.2 V IS=9A, Tj = 25°C dIF/dt=100A/us, VGS=0V ---- 325 1836 11.3 ---- ns nC A Note1: Pulse width limited by maximum junction temperature Note2: L=20mH, VDs=50V, Start TJ=25 ℃ Note3: ISD =9A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25 Note4: Pulse width tp≤300µs, δ≤2% BL9N50 Rev 1.1 5/2019 ℃ www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 4 / 15 BL9N50 Power MOSFET 5. Characteristics Curves Figure 1a Safe Operating Area (No FullPAK) Figure 1b Safe Operating Area (FullPAK) Figure 2a Power Dissipation (No FullPAK) Figure 2b Power Dissipation (FullPAK) BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 5 / 15 BL9N50 Power MOSFET Figure 3a Max Thermal Impendance (No FullPAK) Figure 4 Typical Output Characteristics BL9N50 Rev 1.1 5/2019 Figure 3b Max Thermal Impendance (FullPAK) Figure 5 Typical Transfer Characteristics www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 6 / 15 BL9N50 Power MOSFET Figure 6 Typical Drain to Source ON Resistance vs Drain Current Figure 7 Typical Drian to Source on Resistance vs Junction Temperature Figure 8 Typical Theshold Voltage vs Junction Temperature Figure 9 Typical Breakdown Voltage vs Junction Temperature BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 7 / 15 BL9N50 Power MOSFET Figure 10 Typical Capacitance vs Drain to Source Voltage BL9N50 Rev 1.1 5/2019 Figure 11 Typical Gate Charge vs Gate to Source Voltage www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 8 / 15 BL9N50 Power MOSFET 6. Test Circuit and Waveform Figure 12 Gate Charge Test Circuit Figure 13 Gate Charge Waveforms Figure 14 Resistive Switching Test Circuit Figure 15 Resistive Switching Waveforms BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 9 / 15 BL9N50 Power MOSFET Figure 16 Diode Reverse Recovery Test Circuit Figure 17 Diode Reverse Recovery Waveform Figure 18 Unclamped Inductive Switching Test Circuit Figure 19 Unclamped Inductive Switching Waveform BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 10 / 15 BL9N50 Power MOSFET 7. Package Description C A D ΦP Q B 1 B G H C1 L E N Items F N Values(mm) MIN MAX A 9.60 10.4 B B1 C C1 15.4 8.90 4.30 2.10 2.40 16.2 9.50 4.90 3.00 3.00 L 0.60 0.30 1.12 3.40 1.60 12.0 1.00 0.60 1.42 3.80 2.90 14.0 N Q 2.34 3.15 2.74 3.55 2.90 3.30 D E F G H TO-220F Package BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 11 / 15 BL9N50 Power MOSFET Items Values(mm) MIN MAX A 9.60 10.6 B B1 C C1 D E F G H L N Q 15.0 8.90 4.30 2.30 1.20 0.70 0.30 1.17 2.70 12.6 2.34 2.40 3.50 16.0 9.50 4.80 3.10 1.40 0.90 0.60 1.37 3.80 14.8 2.74 3.00 3.90 TO-220 BL9N50 Rev 1.1 5/2019 Package www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 12 / 15 BL9N50 Power MOSFET Items A B B1 B2 C D E F G H L* M N Values(mm) MIN 6.30 5.70 1.00 6.80 2.10 0.30 0.50 0.30 0.70 1.60 3.9 5.10 2.09 MAX 6.90 6.30 1.20 7.40 2.50 0.60 0.70 0.60 1.00 2.40 4.3 5.50 2.49 *：adjustable TO-251 Package BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 13 / 15 BL9N50 Power MOSFET Items A A1 B C D E1 E2 F G L1 L2 H M N R T Y Values(mm) MIN 6.30 MAX 6.90 0 0.13 5.70 2.10 0.30 0.60 0.70 0.30 0.70 9.60 2.70 0.60 5.10 2.09 6.30 2.50 0.60 0.90 1.00 0.60 1.20 10.50 3.10 1.00 5.50 2.49 0.3 1.40 5.10 1.60 6.30 TO-252 Package BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 14 / 15 BL9N50 Power MOSFET NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: 上海贝岭股份有限公司（总部） 地址：上海市宜山路 810 号 邮编：200233 电话：021-24261000 产品业务咨询及技术支持 电话：021-24261326 传真 2：021-64852222 邮箱 2：marketing@belling.com.cn 上海贝岭深圳分公司（华南区） 地址：深圳市福田中心区民田路新华保险大厦 1510 室 邮编：518031 电话：0755-33336776 0755-33336770 传真：0755-33336788 上海贝岭北京办事处（华北区） 地址：北京市西城区新华里 16 号院锦官苑小区 10 号楼 1 单元 1505 室 邮编：100044 电话：010-64179374 传真：010-8835 9236 BL9N50 Rev 1.1 5/2019 www.belling.com.cn Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited ©2011 Belling All Rights Reserved 15 / 15