BLM04N06-B

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide ● VDS = 60V,ID = 150A excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. RDS(ON) < 4.2mΩ @ VGS=10V ● High density cell design for lower Rdson Application ● Fully characterized avalanche voltage and current ●Power switching application ● Good stability and uniformity with high EAS ●Hard switched and High frequency circuits ● Excellent package for good heat dissipation ●Uninterruptible power supply 100% UIS TESTED！ 100% DVDS TESTED！ TO-220 Top View Schematic diagram TO-263 Top View Package Marking And Ordering Information Device Marking Ordering Codes Package Product Code Packing M04N06 BLM04N06-P TO-220 BLM04N06 Tube M04N06 BLM04N06-B TO-263 BLM04N06 Reel Absolute Maximum Ratings (TA=25℃ Parameter unless otherwise noted) Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID (Note 1) Drain Current-Pulsed IDM Maximum Power Dissipation(Tc=25℃) PD (Note 2) Single pulse avalanche energy EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 60 V ±20 V 150 A 600 A 210 W 1000 mJ -55 To 175 ℃ 0.7 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case Page1 RθJC www.belling.com.cn V 1.0 Green Product BLM04N06 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=50A - 3.5 4.2 mΩ gFS VDS=50V,ID=75A - 180 - S - 8200 - pF - 760 - pF - 680 - pF - 27 - nS On Characteristics Forward Transconductance Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching VDS=25V,VGS=0V, f=1.0MHz Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V, ID=40A, - 25 - nS td(off) VGS=10V,RGEN=3Ω - 90 - nS 40 - nS - 186 - nC - 46 - nC - 70 - nC - - 1.2 V Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=60V,ID=40A VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=150A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. Page2 www.belling.com.cn V 1.0 Green Product BLM04N06 Characteristics Curves Page3 Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage www.belling.com.cn V 1.0 Green Product BLM04N06 Figure 7 Gate-Charge Characteristics Figure 9 Maximum Forward Biased Safe Operation Area Figure 11 Page4 Figure 8 Capacitance Characteristics Figure 10 Single Pulse Power Rating Junction-to-Ambient Normalized Maximum Transient Thermal Impedance www.belling.com.cn V 1.0 Green Product BLM04N06 Test Circuit and Waveform Gate Charge Test Circuit Gate Charge Test Waveform Resistive Switching Test Circuit Resistive Switching Test Waveforms Unclamped Inductive Switching (UIS) Test Circuit Unclamped Inductive Switching (UIS) Test Waveforms Diode Recovery Test Circuit Page5 www.belling.com.cn Diode Recovery Test Waveforms V 1.0 Green Product BLM04N06 Package Description Values(mm) Items A MIN 9.60 MAX 10.6 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 3.50 3.90 TO-220 Page6 www.belling.com.cn Package V 1.0 Green Product BLM04N06 C A L1 B K D I Q L2 H G E F N B1 N Items Values(mm) MIN MAX A 9.80 10.40 B 8.90 9.50 B1 0 0.10 C 4.40 4.80 D 1.16 1.37 E 0.70 0.95 F 0.30 0.60 G 1.07 1.47 H 1.30 1.80 K 0.95 1.37 L1 14.50 L2 1.60 2.30 I 0 0.2 Q 0° 8° 16.50 R N 0.4 2.39 TO-263 Page7 www.belling.com.cn 2.69 Package V 1.0 Green Product BLM04N06 NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to change without prior notice. 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