BLM10P03-D

Green Product BLM10P03 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM10P03 uses advanced trench technology to provide ● VDS = -30V,ID = -24A (PDFN3.3*3.3) excellent RDS(ON), low gate charge. It can be used in a wide ID = -30A(PDFN5*6) variety of applications. ID = -15A (SOP8) Application ID = -40A (TO-252) ●Power switching application RDS(ON) < 10mΩ @ VGS=-10V ●Hard switched and High frequency circuits RDS(ON) < 15mΩ @ VGS=-4.5V ●Battery Protection ● High density cell design for lower Rdson ● Excellent package for good heat dissipation Pin1 Pin1 TO-252-2L SOP8 PDFN 5*6 Pin1 PDFN 3.3*3.3 Package Top View Schematic diagram Package Marking And Ordering Information Device Marking Ordering Codes Package Product Code Packing M10P03 BLM10P03-D TO-252-2L BLM10P03 Tape Reel M10P03 BLM10P03-R PDFN3.3*3.3 BLM10P03 Tape Reel M10P03 BLM10P03-E SOP8 BLM10P03 Tape Reel M10P03 BLM10P03-Q PDFN5*6 BLM10P03 Tape Reel Absolute Maximum Ratings (TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Page1 unless otherwise noted) Symbol VDS VGS ID（PDFN3.3*3.3） ID（PDFN5*6） ID（SOP8） ID（TO-252） IDM（PDFN3.3*3.3） IDM（PDFN5*6） IDM（SOP8） IDM（TO-252） www.belling.com.cn Limit Unit -30 V ±20 V -24 A -30 A -15 A -40 A -96 A -120 A -60 A -160 A Priamry Green Product BLM10P03 Maximum Power Dissipation(Tc=25℃) PD（PDFN3.3*3.3） 8.4 W PD（PDFN5*6） 13 W PD（SOP8） 3.3 W PD（TO-252） 23.2 W TJ,TSTG -55 To 150 ℃ RθJC（PDFN3.3*3.3） 15.0 ℃/W RθJC（PDFN5*6） 9.6 ℃/W RθJC（SOP8） 38.3 ℃/W RθJC（TO-252） 5.4 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -1.5 -2.4 V Drain-Source On-State Resistance(Note 2) RDS(ON) VGS=-10V, ID=-17A - 8 10 mΩ VGS=-4.5V, ID=-13A - 12 15 mΩ VDS=-5V,ID=-17A - 43 - S - 2000 - pF - 290 - pF - 270 - pF - 10 - nS On Characteristics Forward Transconductance gFS Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching VDS=-15V,VGS=0V, f=1.0MHz Characteristics (Note 3) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V, ID=-17A, - 8 - nS td(off) VGS=-10V,RGEN=3Ω - 43 - nS 18 - nS - 36 - nC - 5.3 - nC - 8.8 - nC - - -1.2 V Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,ID=-17A VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=-1 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 3. Guaranteed by design, not subject to production. Page2 www.belling.com.cn Priamry Green Product BLM10P03 Characteristics Curves Page3 Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage www.belling.com.cn Priamry Green Product BLM10P03 Figure 7 Gate-Charge Characteristics Figure 9a Maximum Forward Biased Safe Figure 8 Capacitance Characteristics Figure9b Maximum Forward Biased Safe Operation Operation Area（PDFN3.3*3.3） Figure 9c Maximum Forward Biased Safe Operation Area（SOP8） Page4 www.belling.com.cn Area（PDFN5*6） Figure 9d Maximum Forward Biased Safe Operation Area（TO-252） Priamry Green Product BLM10P03 Figure 10a Single Pulse Power Rating Figure 10b Single Pulse Power Rating Junction-to-Ambient（PDFN3.3*3.3） Junction-to-Ambient（PDFN5*6） Figure 10c Single Pulse Power Rating Figure 10d Single Pulse Power Rating Junction-to-Ambient（SOP8） Junction-to-Ambient（TO-252） Figure 11a Page5 Normalized Maximum Transient Thermal Impedance（PDFN3.3*3.3） www.belling.com.cn Priamry Green Product BLM10P03 Figure 11b Normalized Maximum Transient Thermal Impedance（PDFN 5*6） Figure 11c Normalized Maximum Transient Thermal Impedance（SOP8） Figure 11d Normalized Maximum Transient Thermal Impedance（TO-252） Page6 www.belling.com.cn Priamry Green Product BLM10P03 Test Circuit and Waveform Gate Charge Test Circuit Gate Charge Test Waveform Resistive Switching Test Circuit Resistive Switching Test Waveforms Unclamped Inductive Switching (UIS) Test Circuit Unclamped Inductive Switching (UIS) Test Waveforms Diode Recovery Test Circuit Page7 www.belling.com.cn Diode Recovery Test Waveforms Priamry Green Product BLM10P03 Package Description Symbol A A1 A2 b c D E E1 e L θ Dimensions Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270（BSC） 0.400 1.270 0° 8° SOP8 Page8 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050（BSC） 0.016 0.050 0° 8° Package www.belling.com.cn Priamry Green Product BLM10P03 Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0 .3 T 1.40 1.60 Y 5.10 6.30 TO-252-2L Page9 www.belling.com.cn Package Priamry Green Product BLM10P03 SYMBOL A A1 b c D D1 D2 E E1 e H L L1 L2 R θ MIN 0.70 0.00 0.24 3.25 3.05 2.40 3.00 1.35 3.20 0.30 0.10 6° PDFN3.3*3.3 Page10 www.belling.com.cn NOM 0.80 0.03 0.30 0.152REF 3.32 3.15 2.50 3.10 1.45 0.65BSC 3.30 0.40 0.15 1.13REF 0.20REF 10° MAX 0.90 0.05 0.35 3.40 3.25 2.60 3.20 1.55 3.40 0.15 0.20 14° Package Priamry Green Product BLM10P03 SYMBOL MIN NORMAL MAX A 0.8 0.9 1.0 A1 0.00 0.03 0.05 b 0.35 0.42 0.49 c D 0.254REF 4.9 F E 5.1 1.40REF 5.7 e 5.8 5.9 1.27BSC H 5.95 6.08 6.20 L1 0.10 0.14 0.18 G 0.60REF K 4.00REF L ------- ------- J 0.95BSC P 1.00REF 0.15 E1 3.35 3.40 3.65 θ R 6° 10° 0.25REF 14° PDFN 5*6 Page11 5.0 www.belling.com.cn Package Priamry Green Product BLM10P03 NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: 上海贝岭股份有限公司（总部） 地址：上海市宜山路 810 号 邮编：200233 电话：021-24261000 产品业务咨询及技术支持 电话：021-24261326 传真 2：021-64852222 邮箱 2：marketing@belling.com.cn 上海贝岭深圳分公司（华南区） 地址：深圳市福田中心区民田路新华保险大厦 1510 室 邮编：518031 电话：0755-33336776 0755-33336770 传真：0755-33336788 上海贝岭北京办事处（华北区） 地址：北京市西城区新华里 16 号院锦官苑小区 10 号楼 1 单元 1505 室 邮编：100044 电话：010-64179374 传真：010-8835 9236 Page12 www.belling.com.cn Priamry