BLM3400

Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES ● VDS = 30V,ID = 5.8A Schematic diagram RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired Marking and pin Assignment ● Surface Mount Package Application ●PWM applications ●Load switch SOT-23 top view ●Power management Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3400 BLM3400 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃ ℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 30 V ±12 V 5.8 A 30 A 1.4 W -55 To 150 ℃ 89 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 30 33 - V Off Characteristics Drain-Source Breakdown Voltage Page1 BVDSS VGS=0V ID=250µA www.belling.com.cn V2.0 Pb Free Product BLM3400 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 µA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA VGS(th) VDS=VGS,ID=250µA 0.7 0.9 1.4 V VGS=2.5V, ID=4A - 45 59 mΩ VGS=4.5V, ID=2.9A - 34 45 mΩ VGS=10V, ID=2.9A - 31 41 mΩ VDS=5V,ID=2.9A 10 - - S - 623 - PF - 99 - PF On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 77 - PF Turn-on Delay Time td(on) - 3.3 - nS Turn-on Rise Time tr VDD=15V,ID=2.9A - 4.8 - nS td(off) VGS=10V,RGEN=3Ω - 26 - nS - 4 - nS - 9.5 - nC - 1.5 - nC - 3 - nC - 0.75 1.2 V - - 2.9 A VDS=15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=5.8A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=2.9A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.belling.com.cn V2.0 Pb Free Product BLM3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Page3 www.belling.com.cn V2.0 Pb Free Product BLM3400 SOT-23 PACKAGE INFORMATION Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Page4 www.belling.com.cn V2.0