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BLM3401

BLM3401

  • 厂商:

    BELLING(上海贝岭)

  • 封装:

    SOT-23

  • 描述:

    P沟道增强型功率MOSFET VDS=30V VGS=±20V ID=4.2A P=1.2W SOT23

  • 详情介绍
  • 数据手册
  • 价格&库存
BLM3401 数据手册
Pb Free Product BLM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired Marking and pin Assignment ● Surface Mount Package Application ●PWM applications ●Load switch SOT-23 top view ●Power management Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3401 BLM3401 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -30 V ±20 V -4.2 A -30 A 1.2 W -55 To 150 ℃ 104 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V -1 μA Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - Page1 www.belling.com.cn - V2.0 Pb Free Product BLM3401 Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - VGS(th) VDS=VGS,ID=-250μA -0.7 VGS=-10V, ID=-4.2A - VGS=-4.5V, ID=-4A - - ±100 nA -1.3 V 50 55 mΩ 64 72 mΩ 95 120 mΩ - 10 - S - 950 - PF - 115 - PF - 75 - PF - 7 - nS On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-1A Forward Transconductance gFS VDS=-5V,ID=-4.2A Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,ID=-3.2A - 3 - nS td(off) VGS=-10V,RGEN=6Ω - 30 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 12 - nS Total Gate Charge Qg - 9.5 - nC Gate-Source Charge Qgs - 2 - nC Gate-Drain Charge Qgd - 3 - nC - - -1.2 V VDS=-15V,ID=-4A,VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.belling.com.cn V2.0 Pb Free Product BLM3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A) PD Power(W) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS Page3 www.belling.com.cn ID- Drain Current (A) Figure 6 Drain-Source On-Resistance V2.0 Pb Free Product ID- Drain Current (A) Normalized On-Resistance BLM3401 Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Page4 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.belling.com.cn V2.0 Pb Free Product ID- Drain Current (A) BLM3401 Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Page5 www.belling.com.cn V2.0 Pb Free Product BLM3401 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Page6 www.belling.com.cn V2.0
BLM3401
PDF文档中提到的物料型号是BLM3401。

它是一种瞬态电压抑制二极管(TVS),用于保护电子设备免受静电放电(ESD)和电磁脉冲(EMP)的影响。

器件简介指出,BLM3401具有低电容特性,适用于高速数据线路的保护。


引脚分配方面,BLM3401通常有四个引脚,分别是两个输入/输出引脚和两个接地引脚。


参数特性包括工作电压、反向断态电压、最大箝位电压等,这些参数确保了器件在不同条件下的性能和可靠性。


功能详解说明了BLM3401如何通过其低电容设计来保护高速数据线路,同时保持信号完整性。


应用信息强调了BLM3401在高速通信接口、射频电路和电源管理电路中的应用。


封装信息描述了BLM3401的物理尺寸和电气特性,以及它适用于的封装类型,如SMD或通孔封装。
BLM3401 价格&库存

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BLM3401
  •  国内价格
  • 5+0.19919
  • 20+0.18119
  • 100+0.16319
  • 500+0.14519
  • 1000+0.13679
  • 2000+0.13079

库存:86

BLM3401
  •  国内价格
  • 1+0.82610
  • 200+0.27610
  • 1500+0.17270
  • 3000+0.11880

库存:35205