BLM3415

Pb Free Product BLM3415 P-Channel Enhancement Mode Power MOSFET Description The BLM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A Schematic diagram RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin Assignment Application ● PWM application ● Load switch SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3415 BLM3415 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -20 V ±10 V -4 A -30 A 1.4 W -55 To 150 ℃ 89.3 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage Page1 BVDSS VGS=0V ID=-250μA www.belling.com.cn -20 V2.0 Pb Free Product BLM3415 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±10 μA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.65 -1.0 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4A - 34. 47 mΩ VGS=-2.5V, ID=-4A - 44 60 mΩ VDS=-5V,ID=-4A 8 - - S - 950 - PF - 165 - PF - 120 - PF - 12 nS On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,RL=2. 5Ω - 10 nS td(off) VGS=-4.5V,RGEN=3Ω - 19 nS - 25 nS - 12 nC - 1.4 - nC - 3.6 - nC - - -1.2 V - - -2.2 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-4A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.belling.com.cn V2.0 Pb Free Product BLM3415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Safe Operation Area ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS Page3 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.belling.com.cn V2.0 Pb Free Product ID- Drain Current (A) Normalized On-Resistance BLM3415 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Rdson (mΩ) C Capacitance (pF) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge Page4 Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.belling.com.cn V2.0 Pb Free Product r(t),Normalized Effective Transient Thermal Impedance BLM3415 Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance Page5 www.belling.com.cn V2.0 Pb Free Product BLM3415 SOT-23 PACKAGE INFORMATION Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Page6 www.belling.com.cn V2.0